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| SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MAY 1999 FEATURES FCX717 * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A Partmarking Detail - 717 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -12 -12 -5 -10 -3 -500 1 2 -55 to +150 UNIT V V V A A mA W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX717 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -100 -100 -100 -12 -110 -230 -0.92 -0.85 300 300 160 60 45 80 475 450 240 100 70 110 21 70 130 30 MHz pF ns ns -20 -150 -320 -1.05 -1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V VCES=-10V IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-3A, IB=-50mA* IC=-3A, IB=-50mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.1A, VCE=-2V* IC=-3A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-6V, IC=-2A IB1=IB2=50mA Emitter Cut-Off Current IEBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICES VCE(sat) VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
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