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| FDD8451 N-Channel PowerTrench(R) MOSFET April 2006 FDD8451 N-Channel PowerTrench(R) MOSFET 40V, 28A, 24m Features Max rDS(on) = 24m at VGS = 10V, ID = 9A Max rDS(on) = 30m at VGS = 4.5V, ID = 7A Low gate charge Fast Switching High performance trench technology for extremely low rDS(on) LE tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Application DC/DC converter Backlight inverter REE I DF RoHS compliant A MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous @TC=25C -Continuous @TA=25C -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 40 20 28 9 78 20 37 -55 to 150 mJ W C A Units V V M ENTATIO LE N MP D G S Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient 4.1 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD8451 Device FDD8451 Package D-PAK(TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDD8451 Rev. B 1 www.fairchildsemi.com FDD8451 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V 40 33.5 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 9A Drain to Source On Resistance VGS = 4.5V, ID = 7A VGS = 10V, ID = 9A TJ = 150C VDS = 5V, ID = 9A 1 1.7 -5.7 19 23 32 29 24 30 41 S m 3 V mV/C Forward Transcondductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 742 112 72 1.1 990 150 110 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller"Charge VDS= 20V, ID = 9A VGS = 10V VDD = 20V, ID = 1A VGS = 10V, RGS = 6 7 2 19 5 14 7.7 2.3 3.2 14 10 34 10 20 11 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A Reverse Recovery Time Reverse Recovery Charge IF = 9A, di/dt = 100A/s IF = 9A, di/dt = 100A/s 0.87 25 19 1.2 38 29 V ns nC Notes: 1: Pulse time < 300s, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.1mH, IAS = 20A ,VDD = 36V, VGS = 10V. FDD8451 Rev. B 2 www.fairchildsemi.com FDD8451 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 60 VGS = 10V 4.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 4V VGS = 4.5V VGS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 40 30 20 10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3V VGS = 3.5V VGS = 4V VGS = 5V VGS = 3V VGS = 10V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 10 20 30 40 ID, DRAIN CURRENT(A) 50 60 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 160 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 ID = 9A VGS = 10V ID = 10A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 120 80 TJ = 175oC 40 0 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 40 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 30 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = -55oC 20 TJ = 175oC 10 TJ = 25oC TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8451 Rev. B FDD8451 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = 25V 3000 CAPACITANCE (pF) VDD = 15V VDD = 20V 1000 Ciss Coss 100 Crss f = 1MHz VGS = 0V 0 4 8 12 Qg, GATE CHARGE(nC) 16 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics IAS, AVALANCHE CURRENT(A) 100 Figure 8. Capacitance vs Drain to Source Voltage 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 o RJC = 4.1 C/W TJ = 25oC VGS = 10V 10 TJ = 125oC VGS =4.5V TJ = 150oC 1 1E-3 0.01 0.1 1 10 100 40 60 80 100 120 140 160 175 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 VGS = 10V 100us P(PK), PEAK TRANSIENT POWER (W) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T C ---------------------150 ID, DRAIN CURRENT (A) 10 LIMITED BY PACKAGE 1ms 1000 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10ms 100ms DC 100 SINGLE PULSE 0.1 1 10 80 10 -5 10 10 -4 VDS, DRAIN-SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD8451 Rev. B 4 www.fairchildsemi.com FDD8451 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 0.005 -5 10 SINGLE PULSE 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8451 Rev. B 5 www.fairchildsemi.com FDD8451 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production FDD8451 Rev. B 6 www.fairchildsemi.com |
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