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| FDZ7296 November 2004 FDZ7296 30V N-Channel PowerTrench(R) BGA MOSFET General Description Combining Fairchild's advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features 11 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V * * * * Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB. High performance trench technology for extremely low RDS(ON) Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling Applications * High-side Mosfet in DC-DC converters for Server and Notebook applications D D S S S D S S S S D D Pin 1 S S S S 7296 G Pin 1 G D S D Top Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 20 11 20 2.1 -55 to +150 Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 60 6.3 0.6 C/W Package Marking and Ordering Information Device Marking 7296 Device FDZ7296 Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2004 Fairchild Semiconductor Corporation FDZ7296 Rev B (W) FDZ7296 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V Min 30 Typ Max Units V mV/C 1 100 A nA V mV/C m Off Characteristics 27 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 11 A VGS = 4.5V, ID = 10 A VGS = 10 V, ID = 11 A, TJ=125C VDS = 15 V, f = 1.0 MHz VDS = 5 V, VGS = 15 mV, V GS = 0 V, 1 1.8 -4.9 7 9 9.1 1520 420 130 46 1.1 10 4 27 13 22 3 8.5 12 13 Dynamic Characteristics Ciss Coss Crss gFS RG td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd IS VSD trr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance (Note 2) pF pF pF S 20 8 43 23 31 17 ns ns ns ns nC nC nC nC 1.7 1.2 A V nS nC ID = 11 A f = 1.0 MHz Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.7 A Voltage Diode Reverse Recovery Time IF = 11A diF/dt = 100 A/s Diode Reverse Recovery Charge VDD = 15 V, ID = 11 A, 12 4.5 3.1 Drain-Source Diode Characteristics and Maximum Ratings (Note 2) 0.7 28 (Note 2) 18 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a) 60C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB b) 108C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ7296 Rev B(W) FDZ27296 Dimensional Outline and Pad Layout FDZ7296 Rev B(W) FDZ7296 Typical Characteristics 20 VGS = 10.0V 6.0V ID, DRAIN CURRENT (A) 15 4.5V 3.0V 10 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 VGS = 3.0V 3 2 3.5V 4.0V 4.5V 6.0V 10.0V 5 1 2.5V 0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 0 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 11A VGS = 10V ID =5.5 A 0.02 1.4 1.2 0.015 TA = 125 C 0.01 TA = 25oC o 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 20 VDS = 5V ID, DRAIN CURRENT (A) 15 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 10 TA = 125oC 25oC 1 TA = 125 C 10 25 C -55 C 5 o o o 0.1 0.01 -55oC 0.001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 4 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7296 Rev B(W) FDZ7296 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 2000 f = 1MHz VGS = 0 V 8 CAPACITANCE (pF) VDS = 10V 20V 1600 Ciss 6 15V 1200 4 800 Coss 2 400 Crss 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 108C/W TA = 25C ID, DRAIN CURRENT (A) 40 10 100ms 1s 10ms 30 1 DC 10s VGS = 10V SINGLE PULSE o RJA = 108 C/W TA = 25 C o 20 0.1 10 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 108 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7296 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 |
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