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| FFH50US60S September 2003 FFH50US60S 50A, 600V StealthTM Diode General Description The FFH50US60S is a StealthTM diode optimized for low loss performance in output rectification. The StealthTM family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Formerly developmental type TA49468. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 80ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated . . . . . . . . . . . . . . . . . . . . 20mJ Applications * Switch Mode Power Supplies * Power Factor Correction * Uninterruptible Power Supplies * Motor Drives * Welders Package JEDEC STYLE 2 LEAD TO-247 ANODE Symbol K CATHODE A CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 120oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 600 600 600 50 100 500 200 20 -55 to 175 300 260 Units V V V A A A W mJ C C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S Package Marking and Ordering Information Device Marking 50US60S Device FFH50US60S Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 50A TC = 25C TC = 125C 1.38 1.37 1.54 1.53 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 110 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 15V IF = 50A, dIF/dt = 100A/s, VR = 15V IF = 50A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 50A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 50A, dIF/dt = 1000A/s, VR = 390V, TC = 125C 47 75 113 9.6 0.9 235 1.5 15 2.3 110 0.8 46 3.1 1000 80 124 ns ns ns A C ns A C ns A C A/s Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 0.75 30 C/W C/W (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S Typical Performance Curves 100 90 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 0.01 100 25oC 75 C o 1000 175oC 100 150oC 10 125oC 100oC 1 75oC 175oC 125oC 0.1 25oC 200 300 400 500 600 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 200 180 160 t, RECOVERY TIMES (ns) 140 120 100 80 60 40 20 0 0 10 20 ta at dIF/dt = 200A/s, 500A/s, 800A/s 30 40 50 60 70 80 90 100 tb at dIF/dt = 200A/s, 500A/s, 800A/s VR = 390V, TC = 125oC Figure 2. Reverse Current vs Reverse Voltage 225 VR = 390V, TC = 125oC 200 tb at IF = 100A, 50A, 25A t, RECOVERY TIMES (ns) 175 150 125 100 75 50 25 0 ta at IF = 100A, 50A, 25A 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 50 VR = 390V, TC = 125oC dIF/dt = 800A/s 60 Figure 4. ta and tb Curves vs dIF /dt VR = 390V, TC = 125oC 40 50 40 IF = 100A 30 IF = 50A 20 IF = 25A 10 30 dIF/dt = 500A/s 20 dIF/dt = 200A/s 10 0 0 10 20 30 40 50 60 70 80 90 100 0 0 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF /dt (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 FFH50US60S Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 2.4 2.2 2.0 1.8 IF = 100A 1.6 IF = 50A 1.4 IF = 25A 1.2 1.0 0.8 0.6 0 200 400 600 800 1000 1200 QRR, REVERSE RECOVERED CHARGE (C) VR = 390V, TC = 125oC 6 VR = 390V, TC = 125oC 5 4 IF = 100A 3 IF = 50A 2 IF = 25A 1 0 0 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 1400 f = 1MHZ CJ , JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0.03 Figure 8. Reverse Recovery Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 25 IF = 50A, VR = 390V, dIF /dt = 600A/usec 180 170 150 140 130 120 110 tRR 100 90 80 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature 60 IF(AV), AVERAGE FORWARD CURRENT (A) 50 40 30 20 10 0 115 125 135 145 155 (oC) 165 175 TC, CASE TEMPERATURE Figure 11. DC CURRENT DERATING CURVE (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 t, RECOVERY TIMES (ns) IRM(REC) 160 FFH50US60S Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 10-4 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage Waveforms (c)2003 Fairchild Semiconductor Corporation FFH50US60S Rev A3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I5 |
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