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FGPF30N30 300V, 30A PDP IGBT
September 2006
FGPF30N30
300V, 30A PDP IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat) =1.4V @ IC = 20A * High Input Impedance * Fast switching * RoHS Complaint
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution loss is essential.
Application
. PDP System
TO-220F
1 1.Gate
2.Collector
3.Emitter
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC
Description
Collector-Emitter Voltage
FGPF30N30
300 30 80 46 18.5 -55 to +150 -55 to +150 300
Units
V V A W W
o
C
oC o
C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
2.7 62.5
Units
o
C/W
oC/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGPF30N30 Rev. A
FGPF30N30 300V, 30A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF30N30
Device
FGFP30N30TU
Package
TO-220F
= 25oC unless otherwise noted
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics T
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES
C
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.6 ---
--100 250
V V/oC uA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC =10A, VGE = 15V IC =20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---685 95 30 ---pF pF pF 2.5 ----4.0 1.2 1.4 1.8 1.9 5.0 1.5 ---V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200 V, IC = 20A VGE = 15V VCC = 200 V, IC = 20A RG = 20, VGE = 15V Resistive Load, TC = 125oC VCC = 200 V, IC = 20A RG = 20, VGE = 15V Resistive Load, TC = 25oC -----------10 44 76 180 10 46 82 270 39 6 16 ---300 ------ns ns ns ns ns ns ns ns nC nC nC
2 FGPF30N30 Rev. A
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FGPF30N30 300V, 30A PDP IGBT
Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
80 70
Collector Current, IC [A] 20V 15V 12V 10V
TC = 25 C
o
Figure 2. Typical Output Characteristics
80
20V TC = 125 C 12V 10V
o
70
Collector Current, IC [A]
15V
60 50 40 30 20 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
VGE = 8V
60 50 40 30 20 10 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
VGE = 8V
Figure 3. Saturation Voltage
80
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
80
Common Emitter VCE = 20V
Collector Current, IC [A]
Collector Current,IC [A]
60
TC = 25 C TC = 125 C
o
o
TC = 25 C
o
60 T = 125oC C
40
40
20
20
0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
0 0 2 4 6 8 10 12 14 Gate-Emitter Voltage,VGE [V] 16
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, VCE [V]
30A
Figure 6. Saturation Voltage vs.VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
T = 25 C
o
16
C
1.5
20A
12
10A
8
20A
1.0
4
IC = 10A
30A
0.5 25
Common Emitter VGE = 15V
0
50 75 100 o Case Temperature, TC [ C]
125
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
3 FGPF30N30 Rev. A
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FGPF30N30 300V, 30A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs.VGE
20
Common Emitter Collector-Emitter Voltage, VCE [V] T = 125 C
C
o
(Continued)
Figure 8. Capacitance Characteristics
2500
16
1000
Capacitance [pF]
Cies
12
Coes
8
100
Cres Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
4
20A IC = 10A
30A
0 0
10
20
4 8 12 16 Gate-Emitter Voltage, VGE [V]
0
5 10 15 20 25 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15
Common Emitter RL = 10
Figure 10. SOA Characteristics
200 100
50us 100us
Gate-Emitter Voltage, VGE [V]
12
TC = 25 C
o
Collector Current, Ic [A]
200V Vcc = 100V
10
DC Operation
1ms
9
1
Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature
6
3
0.1
0 0 8 16 24 Gate Charge, Qg [nC] 32 40
0.01 0.1
1 10 100 Collector-Emitter Voltage, V CE [V]
1000
Figure 11. Turn-On Characteristics vs. Gate Resistance
100
tr
Figure 12. Turn Off Characteristics vs. Gate Resistance
1000
tf
Switching Time [ns]
td(on)
Switching Time [ns]
10
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
100
td(off) Common Emitter V CC = 200V, V GE = 15V IC = 20A T C = 25 C
o o
1 0 20 40 60 80 Gate Resistance, RG [] 100
10 0 10 20 30
T C = 125 C
40
50
60
70
Gate Resistance, R G [ ]
4 FGPF30N30 Rev. A
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FGPF30N30 300V, 30A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
Common Emitter VGE = 15V, RG = 20
(Continued)
Figure 14. Turn-Off Characteristics vs. Collector Current
500
tf
tr
100
Switching Time [ns]
TC = 25 C TC = 125 C
o
o
Switching Time [ns]
100
td(off)
td(on)
10
Common Emitter VGE = 15V, RG = 20 T C = 25 C T C = 125 C
o o
5
10
15
20
25
30
5
10
15
20
25
30
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
500
Eoff
Figure 16. Switching Loss vs Collector Current
1000
Eon
Switching Loss [uJ]
Switching Loss [uJ]
100
100
Eon
Eoff
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
10
Common Emitter VGE = 15V, RG = 20 T C = 25 C T C = 125 C
o o
10
0
10
20 30 40 50 Gate Resistance, RG []
60
70
1 0 5 10 15 20 25 30
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .1
0 .0 1
1 E -3 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c t a n g u la r P u l s e D u r a t io n [ s e c ]
5 FGPF30N30 Rev. A
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FGPF30N30 300V, 30A PDP IGBT
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
6 FGPF30N30 Rev. A
15.87 0.20
www.fairchildsemi.com
FGPF30N30 300V, 30A PDP IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FGPF30N30 Rev. A
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