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| FJV992 FJV992 Audio Frequency Low Noise Amplifier * Complement to FJV1845 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 300 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob NV Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Emitter Breakdown Voltage Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VEB= -6V, IC=0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE=0, f=1MHz -0.55 50 3 40 150 200 Min. -120 -120 -5 -30 800 -300 -0.65 mV V MHz pF mV Max. Units V V V nA hFE2 Classification Classification hFE2 P 200 ~ 400 Marking F 300 ~ 600 E 400 ~ 800 2J P hFE Classification (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Typical Characteristics -1.0 -10 IB = -1.2A IB = -1.2A -0.8 IB = -24A IB = -20A IB = -16A IB = -1.0A IB = -0.8A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -8 -0.6 -6 IB = -12A IB = -0.6A -0.4 -4 IB = -8A IB = -0.4A -0.2 IB = -4A -2 IB = -0.2A IB = 0 0.0 0 -20 -40 -60 -80 -100 0 0 -1 -2 IB = 0 -3 -4 -5 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 -1 Ta=125 C 0 hFE, DC CURRENT GAIN Ta=25 C Ta=-25 C 0 0 VCE(SAT)[V], SATURATION VOLTAGE VCE=-6V IC=10IB 100 -0.1 Ta=25 C 0 Ta=125 C 0 Ta=-25 C 0 10 -1E-3 -0.01 -0.1 -0.01 -1E-3 -0.01 -0.1 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage -0.12 VBE(SAT)[V], SATURATION VOLTAGE IC=10IB -0.10 1 VCE=-6V Ta=-25 C Ta=25 C Ta=125 C 0 0 0 IC[A], COLLECTOR CURRENT -0.08 -0.06 Ta=125 C 0 Ta=25 C 0 Ta=-25 C 0 -0.04 -0.02 0.1 1E-3 0.01 0.1 -0.00 -0.2 -0.4 -0.6 -0.8 -1.0 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 1000 IE=0 f = 1MHz VCE = -6V Cob [pF], CAPACITANCE 100 1 10 0.1 -1 -10 -100 -1000 1 0.1 1 10 100 V CB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT Figure 7. Collector Output Capacitance Figure 8. Current Gain Bandwidth Product 600 PC[mW], POWER DISSIPATION 500 400 300 200 100 0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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