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FM2G150US60
IGBT
FM2G150US60
Molding Type Module
General Description
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * * UL Certified No. E209204 Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 150A High input impedance Fast and soft anti-parallel FWD
Package Code : 7PM-BB
E1/C2
Application
* * * * * AC & DC motor controls General purpose inverters Robotics Servo controls UPS
C1 E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw: M5 Mounting Screw: M6
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C
@ AC 1minute
FM2G150US60 600 20 150 300 150 300 10 625 -40 to +150 -40 to +125 2500 2.0 2.5
Units V V A A A A us W C C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2002 Fairchild Semiconductor Corporation
FM2G150US60 Rev. A1
FM2G150US60
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC = 200mA IC = 150A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---12840 1400 354 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---90 50 160 85 1.6 4.3 5.9 160 64 240 210 2.7 7.1 9.8 -620 120 270 --200 200 -----------700 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 150A, RG = 2.0, VGE = 15V Inductive Load, TC = 25C
VCC = 300 V, IC = 150A, RG = 2.0, VGE = 15V Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 150A, VGE = 15V
(c)2002 Fairchild Semiconductor Corporation
FM2G150US60 Rev. A1
FM2G150US60
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 150A TC = 100C TC = 25C TC = 100C IF = 150A di / dt = 300 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 15 22 675 1430
Max. 2.8 -130 -20 -1270 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.03 -Max. 0.20 0.47 -270 Units C/W C/W C/W g
(c)2002 Fairchild Semiconductor Corporation
FM2G150US60 Rev. A1
FM2G150US60
320 280 240 200 160 120 80 Common Emitter T C = 25
300 20V 15V 12V 250 VGE = 10V Common Emitter VGE = 15V TC = 25 TC = 125
Collector Current, IC [A]
Collector Current, I C [A]
200
150
100
50 40 0 0 2 4 6 8 0 0.3 1 10 20
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
180 Common Emitter V GE = 15V 160 300A 140
V CC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, V [V] CE
4
Load Current [A]
120 100 80 60 40 20 Duty cycle : 50% T C = 100 Power Dissipation = 200W 0.1 1 10 100 1000
3 150A 2 IC = 80A 1
0 0 30 60 90 120 150
0
Case Temperature, TC []
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8 300A 4 IC = 80A 0 0 4 8 12 16 20 150A
8 300A 4 IC = 80A 0 0 4 8 12 16 20 150A
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FM2G150US60 Rev. A1
FM2G150US60
35000
30000
Common Emitter V GE = 0V, f = 1MHz T C = 25
1000
Ton
Capacitance [pF]
20000
Switching Time [ns]
25000
Cies
Tr 100
15000
10000
Coes
5000 Cres 0 0.5 10 1 10 30 1
Common Emitter V CC = 300V, V GE = 15V IC = 150A T C = 25 T C = 125 10 50
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
3000
Switching Time [ns]
1000
Common Emitter V CC = 300V, VGE = 15V IC = 150A T C = 25 T C = 125
20000 Common Emitter VCC = 300V, VGE = 15V IC = 150A TC = 25 TC = 125
Toff
10000
Switching Loss [uJ]
Eoff
Tf
Eon 100 Tf
1000 1 10 50 1 10 50
Gate Resistance, R G [ ]
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V CC = 300V, V GE = 15V RG = 2.0 T C = 25 T C = 125 Ton 100
1000
Switching Time [ns]
Switching Time [ns]
Common Emitter VCC = 300V, VGE = 15V RG = 2.0 T C = 25 T C = 125
Toff
Tr
100
Tf
10 20 40 60 80 100 120 140 150
20
40
60
80
100
120
140 150
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FM2G150US60 Rev. A1
FM2G150US60
15
Common Emitter V = 300V, V GE = 15V 10000 CC RG = 2.0 T C = 25 T C = 125
Gate - Emitter Voltage, VGE [ V ]
Eoff Eoff
12
Common Emitter RL = 2 T C = 25
300 V
Switching Loss [uJ]
Eon 1000 Eon
9 200 V 6 V CC = 100 V
3
100 20
0
40 60 80 100 120 140 150
0
100
200
300
400
500
600
700
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000 IC MAX. (Pulsed) IC MAX. (Continuous) 50us 1 100 100us
500
Collector Current, IC [A]
DC Operation 10
Collector Current, IC [A]
100
10
1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area VGE = 20V, T C = 100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1000
1
Thermal Response, Zthjc [/W]
Collector Current, I C [A]
100
0.1
0.01
10 Single Nonrepetitive Pulse T J 125 V GE = 15V RG = 2.0 0 100 200 300 400 500 600 700
1E-3
T C = 25 IGBT : DIODE : 10
-5
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2002 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FM2G150US60 Rev. A1
FM2G150US60
400 350 300 250 200 150 100 50 0 0 1 2 3 4
30
Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns]
Common Cathode VGE = 0V TC = 25 TC = 125
Common Cathode di/dt = 300A/ TC = 25 TC = 100 Irr Irr Trr 10 Trr
Forward Current, I F [A]
5 0 20 40 60 80 100 120 140 160
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2002 Fairchild Semiconductor Corporation
FM2G150US60 Rev. A1
FM2G150US60
Package Dimension
7PM-BB (FS PKG CODE BE)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation FM2G150US60 Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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