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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR WBFBP-06C (2x2x0.5) unit: mm DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES Complementary Pair One 5551-Type NPN, One 5401-Type PNP Ultra-Small Surface Mount Package APPLICATION Ideal for Medium Power Amplification and Switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: KNM 1 KNM E1,B1,C1=NPN 5551 Section E2,B2,C2=PNP 5401 Section 5551 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PC RJA TJ Tstg Parameter Value 180 160 6 0.2 0.15 625 150 -55-150 Units V V V A W K/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range 5401 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PC RJA TJ Tstg Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range Parameter Value -160 -150 -5 -0.2 Units V V V A 0.15 625 150 -55-150 W K/W 5551 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 Test unless otherwise MIN 180 160 6 specified TYP MAX UNIT V V V 50 50 conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Ic=100A,IE=0 Ic=1mA, IB=0 IE= 10A, IC=0 VCB= 120V VEB= 4V, IC=0 VCE= 5 V, VCE= 5 V, VCE= 5 V, IC= 1 mA IC = 10 mA IC= 50 mA IE=0 nA nA 80 80 30 0.15 0.2 1 1 100 300 6 8 V V MHz pF dB 250 DC current gain Collector-emitter saturation voltage VCEsat VBEsat IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA IC= 10 mA, IB= 1 mA IC= 50 mA, IB= 5 mA VCE=10V,IC=10mA,,f=100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Ic=0.2mA, f=1KHZ,Rg=1k Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure fT Cob NF 5401 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob NF Test unless conditions otherwise specified) MIN -160 -150 -5 -0.05 -0.05 50 60 50 -0.2 -0.5 -1 -1 100 300 6 V V V V MHz pF 240 TYP MAX UNIT V V V A A IC=-100A , IE=0 IC= -1mA , IE=-10A, IB=0 IC=0 VCB=-120 V , IE=0 VEB=-3V , VCE=-5 V, VCE=-5 V, VCE=-5 V, IC=0 IC= -1mA IC= -10mA IC= -50mA IC=-10 mA, IB=-1mA IC=-50 mA, IB=-5mA IC= -10 mA, IB=-1mA IC= -50 mA, IB=-5mA VCE= -10V, IC= -10mA f = 100MHz VCB=-10V, IE= 0,f=1MHz VCE= -5.0V, IC= -200A, RS= 10,f = 1.0kHz Base-emitter saturation voltage Transition frequency Output Capacitance Noise Figure 8.0 dB Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.590 REF. 0.590 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.023 REF. 0.023 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRTCUITS |
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