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FQE10N20LC QFET FQE10N20LC 200V Logic N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. (R) Features * * * * * * 4.0A, 200V, RDS(on) = 0.36 @VGS = 10 V Low gate charge ( typical 14.5 nC) Low Crss ( typical 44.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-126 GDS FQE Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) FQE10N20LC 200 4 2.5 16 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 320 4 1.28 5.5 12.8 0.10 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 9.8 62.5 Units C/W C/W (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 200 ------0.28 ------10 100 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.0 A VGS = 5 V, ID = 2.0 A VDS = 30 V, ID = 2.0 A (Note 4) 1.0 --- -0.29 0.32 5.2 2.0 0.36 0.39 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---375 102 45.5 490 135 60 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 9.5 A, VGS = 5 V (Note 4, 5) VDD = 100 V, ID = 9.5 A, RG = 25 (Note 4, 5) -------- 16.5 220 80 110 14.5 1.6 9.5 45 450 170 230 19 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/s (Note 4) ------ ---163 0.89 4.0 16 1.5 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 30mH, IAS = 4.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Typical Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 10.0 V 8.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V Bottom : 2.5 V Top : 10 1 150 C o 10 0 10 0 25 C o -55 C o Notes : 1. 250 s Pulse Test 2. TC = 25 10 -1 10 -1 10 0 10 1 10 -1 Notes : 1. VDS = 30V 2. 250 s Pulse Test 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 10 1 RDS(ON) [ ], Drain-Source On-Resistance 0.8 0.6 VGS = 5V IDR, Reverse Drain Current [A] 10 0 0.4 VGS = 10V 0.2 Note : TJ = 25 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.0 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1400 1200 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VGS, Gate-Source Voltage [V] 10 VDS = 40V VDS = 100V VDS = 160V Capacitance [pF] 8 800 600 400 200 0 -1 10 Notes : 1. VGS = 0 V 2. f = 1 MHz 0 Ciss Coss Crss 6 4 2 Note : ID = 9.5A 10 10 1 0 0 4 8 12 16 20 24 28 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Typical Characteristics (Continued) 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 2 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 2 Figure 8. On-Resistance Variation vs Temperature 10 5 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 10 1 4 100 s 10 ms 1 ms 100 ms DC 3 10 0 2 10 -1 Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 1 D = 0 .5 ZJC(t), Thermal Response 0 .2 10 0 0 .1 0 .0 5 0 .0 2 0 .0 1 N o te s : 1 . Z J C ( t) = 9 .8 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 10 -1 s in g le p u ls e PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS 5V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 5V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQE10N20LC Package Dimensions TO-126 3.90 0.10 8.00 0.30 3.25 0.20 o3.20 0.10 14.20MAX 11.00 0.20 (1.00) (0.50) 1.75 0.20 0.75 0.10 1.60 0.10 0.75 0.10 13.06 0.30 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet seriesTM ACExTM FAST(R) ActiveArrayTM BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM HiSeCTM E2CMOSTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design First Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I8 |
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