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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C (2x2x0.5) unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 1 MARKING:F21 F21 TR1 MAXIMUM RATINGS TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -0.5 Units V V V A 0.15 150 -55-150 W DTR2 Absolute maximum ratings(Ta=25) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150 150 -55~150 Unit V V mA mW TR1 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test unless conditions otherwise MIN -15 -12 -6 specified) TYP MAX UNIT V V V -0.1 -0.1 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance IC=-10A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB= -15 V, IE=0 VEB=- 6V, IC=0 VCE=-2V, IC=-10mA IC=-200mA,IB=-10mA VCE=-2V,IC=-10mA, f=100MHz VCB=-10V,IE=0,f=1MHz A A V MHz pF 270 680 -0.25 260 6.5 fT Cob DTR2 Electrical characteristics (Ta=25) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. Typ Max. 0.5 Unit V V mA A Conditions VCC=5V ,IO=100A VO=0.3V ,IO=10 mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V ,IO=5mA 3 0.3 0.88 0.5 30 7 0.8 10 1 250 13 1.2 K MHz VCE=10V ,IE=-5mA,f=100MHz Typical Characteristics TR1 DTR2 Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.550 REF. 0.550 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.022 REF. 0.022 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRCUITS |
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