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1,
Introduction In the fields of comm unication systems and consumer electronics (e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners), analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy and high reliability. To respond to above described requirment, NEC has developed many Kinds of Si-monolithic microwave ICs. In this report, the device structure and the results of the reliability qualification tests on Si MMICs are described. Qualification tests have been performed for the MMIC and the MMIC elements such as transistor, resistor and capacitor.
2.
Device structure
Fig.l Fig.3 show the cross sectional view transistor cell, capacitor and resistor. The MNS(Metal Nitride ~miconductor) sturcture is adoped in capacitors. The resistors are formed by polysilicon. The features of transistor cell are described below: (1) An optimal epitaxial layer grown by VPE(Vapour Phased Epitaxy). (2) Oxide isolation to reduce parasitic capacitance. (3) A shallow and higher impurity doped base by ion implantation. A shallow emitter by diffusion from As-doped polysilicon. (4) An emitter of 0.5 .u m width processed by photo lithograph. (5) A nitride passivation film. (6) A Ti-Pt-Au electrode structure.
3..Qualification
(1)
Tests Tests on Basic Element. by performing ofIC qualification such as transistor, Design rules for ICs are qualified capacitor and resistor . A series of qualification following items: (a) High temperature on transistor (b) High temperature tests on basic elements consist of storage tests at Ta=259C,295 DC bias test at Tj=200C and 337C
Qualification
test on each basic elements consisting
and resistor . on capacitor.
(2)
Qualification
Tests on IC tests of ICs are performed on typical types of each structure and items: level, function,
Qualification
family classified by integration
.production technique applied. A series of qualification tests on IC consist of following (a) (b) (c) (d) (e) Environmental Radiation tests (Thermal and Mechanical). hardness.
Solderability strength. High temperature storage tests at Ta=200C. High temperature DC bias tests at Tj=200C.
Test conditions shown Table 1.
and sample size of the qualification and criteria
tests are
The delta parameters Table 2-2.
are shown in Table 2-1 and
4. Test results and Discussions
I Basic element I
(1) Transistor The summary of qualification test results are presented at Table 3. High temperature storage test High temperature storage test at Ta=259C,295C and 337C were performed using 10 samples. The test results are shown Table 4. At the high temperature stress level(Ta=337C), the samples have started to fail from 100 hours. The failure mode is hFE degradation. This is caused by diffusion of Au into Si due to degradation of Pt as barrier . The Arrhenius plots on the tests are shown in Fig. 4, using f::::.Ea=1.8e that has been confirmed at Au electrode microwave V Si transistor . From this plot, the estimated MTF for transistor at Tj=100C is 3.0 x 1011 hours.
Resistor Element Poly silicon Resistor High temperature storage tests at Ta=259C, 295C and 337C were performed using 10 samples for 3000 hours. The test results are shown Table 5. The Arrhenius test are shown in Fig. 4. This Arrhenius energy of 1.8eV. From this plot, the estimated Resistor at Ta=100C is 3.0 x 1011 hours. plots on the plot gives the activation MTF for polysilcon
(2)
(3)
Capacitor Biased test on 10 MNS capacitors has been performed condition of 6V at Ta=200C No failure was observed. Consequently, for 5000 hours. The test results are shown at Table 6.
with
each basic element is considered to be sufficiently MMI Cs.
reliable for constructing
~~
Qualification and structure
test have performed of wafer fabrication. storage test
for prescaler IC
.uPB1509B as the typical of the family which are classified by process
CD
High Temperature
High temperature
storage test at Ta=200C
was performed
for
.1 PB1509B using 20 samples. This test was performed for 5000 hours. The test results are shown Table 7. No failure has been observed for 5000 hours. (?) High Temperature DC bias test High temperature DC bias test at Tj=200C .1 PB1509B using 100 samples. This test was performed 6Icc and 6Pout Any significant for 5000 hours. The test results are shown Table 8. No failure has been observed for 5000 hours. changes are shown in Fig. 5. of the two parameters has not been variation
was performed
for
observed during 5000 hours at Tj=200C. If one device was failed at the test period of 5000 hours at Tj=200C, the MTF of 6Icc or 6Pout Fig. 6, using 6Ea=1.8eV, Au electrode microwave Si transistor. line were drawn in by the results of is MTF at Tj=100C which is confirmed
estimated to be over 1 x 109 hours.
@
Thermal and Mechanical Environmental Test and Solderability Strength. As shown Table 3, no failure was obserbed with respect to thermal envionmental test, mechanical environmental test and solderability strength.
@
Radiation
Hardness irradiation test was carried out for prescaler IC 1 x 106 rad/hour.
Gamma-ray
.u PB1509B. Dose rate is 1 x 105 and
The test results are shown Table 3. No failure was observed with respect to this test. Consequently, the Si MMICs radiation are sufficiently hardness. it was confirmed that tough from the view point of
5.
Conclusion Accelerated 1 x 109 hours. Radiation Hardness tests have been carried out on prescaler . was observed up to 1 x 106 rad gamma ray irradiation. are sufficiently reliable for practical No degradation life test have been performed on prescaler, their is estimated to be over Tr, resistor and capacitor. MTF at Tj=100C
It has confirmed that the Si MMICs applications.
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Table 2-1
Delta Parameters and Criteria of Basic Elements
Table 2-2
Delta Parameters
and Criteria
of Si MMIC
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Table
4
High Temperature
Storage Test of Transistor Number Failures
650 1000
Element
Test
Quantity
0
of
400
Condition
72
144
240
2000
Hours
Ta=259t
10
0
0
0
0
0
0
0
0
*
Ta=295C
*
8
10
0
0
0
0
0
0
3 *
*
Ta=337C
*
9 9
*
10
10 *hFE
0
3
7
degradation
Table
5
High Temperature Poly
Silicon
Storage Test of Resistor Element
Resistor
Test Condition Ta=259C
Quantity
Q-
Number
50 100 300 500 1000
of
Failures
1500 2000 2500 3000
Hours
10
0
0
0
0
0
0
0
0
0
0
Ta=295C
10
0
0
0
0
0
1
3
5
5
7
Ta=337C
10
0
0
2
5
7
10
Table 6
High Temperature
DC Bia.s Test of Capacitor
Test
Quantity
0
Number
of
Failures ~
0
Condition
200
0
5001
1000
5000
t)
Hours
Tj=200C
10
0
0
0
Table
7
High Temperature
Storage Test of Si MMIC Number of
Test
Quantity
0
Failures 3000
0
Hours
Condition
168
0
~ 0
1000 ri""5OO 0 0
.uPB1509B
20
Test
0 Condition
Ta=200C
Table 8
High Temperature
DC Bias Test of Si MMIC
Test Condition
.uPB1509B
Quantity
0
Number 168
0 Tj=200C
of
Failures 5000
0 Hours
500
0
1000 ri""5OOl 0 0
100
Test
0 Condition
f.ICC(%)
10.00% 8.00%
6.00%
4.00%
2.00%
~ ---AVE
-+-NIN
MAX
0.00%
-2.00% -4.00%
-6.00%
-8.00% -10.00%
2
6.po(dB)
5
1
0.5 0 -0.5
-1.5
-2
Fig.5
~PB15O9B DC BIAS
PARAMETER TEST
CHANGES
ON HIGH
TEMPERATURE
Fig.6
ARRHNIUS PLOT TEMPERATURE
OF PRESCALER ON DC BIAS TEST
HIGH

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