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| GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4923-4.0 DS4923-5.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) (max) (max) (max) 600V 2.0V 500A 350A 1000A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 9(C1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order as: GP350MHB06S Note; When ordering, use complete part number. 11 10 8 9 1 2 3 6 7 5 4 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP350MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25C DC, Tcase = 75C IC(PK) 1ms, Tcase = 25C 1ms, Tcase = 75C Pmax Visol Maximum power dissipation Isolation voltage (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 600 20 500 350 1000 700 1750 2500 Units V V A A A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor Thermal resistance - diode Conditions DC junction to case per arm DC junction to case Min. Mounting - M6 Electrical connections - M6 - 40 Max. 70 160 15 150 125 125 5 5 Units o C/kW C/kW o Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Junction temperature Transistor Diode o C/kW o C C o Tstg - Storage temperature range Screw torque o C Nm Nm 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S ELECTRICAL CHARACTERISTICS Tj = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tj = 125C IGES VGE(TH) Gate leakage current Gate threshold voltage VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 350A VGE = 15V, IC = 350A, Tj = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 350A, IF = 350A, Tj = 125C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.0 2.2 1.51 1.5 22500 Max. 2 1 7.5 2.6 2.8 215 700 2.31 2.3 Units mA mA A V V V A A V V pF VCE(SAT) Collector-emitter saturation voltage Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP350MHB06S INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON trr Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 350A VR = 50%VCES, dIF/dt = 1000A/s IC = 350A VGE = 15V VCE = 50% VCES RG(ON) = RG(OFF) = 5 L ~ 100nH 320 150 10 190 12 ns ns mJ ns C Conditions Min. Typ. 730 250 26 Max. Units ns ns mJ Tj = 125C unless stated otherwise. td(off) tf EOFF td(on) tr EON trr Qrr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery time Diode reverse recovery charge IF = 350A VR = 50%VCES, dIF/dt = 1000A/s IC = 350A VGE = 15V VCE = 50% VCES RG(ON) = RG(OFF) = 5 L ~ 100nH 380 250 35 280 18 ns ns mJ ns C 910 490 40 ns ns mJ 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 450 Common emitter 400 Tcase = 125C 350 Collector current, Ic - (A) 450 Common emitter 400 Tcase = 25C 350 Vge = 20/15/12/10V Collector current, Ic - (A) 300 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 Collector-emitter voltage, Vce - (V) Fig.3 Typical output characteristics 300 250 200 150 100 50 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) Fig.4 Typical output characteristics 3.5 20 18 16 Tj = 25C VGE = 15V VCE = 300V A 45 Tj = 125C VGE = 15V 40 VCE = 300V 35 Turn-on energy, EON - (mJ) B A B Turn-on energy, EON - (mJ) 14 12 10 8 6 4 2 0 0 50 200 250 100 150 Collector current, IC - (A) 30 25 20 15 10 C C A: Rg = 15 B: Rg = 10 C: Rg = 5 300 350 5 0 0 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 250 Collector current, IC - (A) 300 350 Fig.5 Typical turn-on energy vs collector current Fig.6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP350MHB06S 30 Tj = 25C VGE = 15V VCE = 300V A B C 20 45 40 35 Tj = 125C VGE = 15V VCE = 300V A B C 25 Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 30 25 20 15 10 5 0 0 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 250 Collector current, IC - (A) 300 350 15 10 5 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 250 Collector current, IC - (A) 300 350 0 0 Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current 3.5 Tj = 25C VGE = 15V 3.0 VCE = 300V 2.5 2.0 1.5 1.0 0.5 0 0 Rg = 5 Diode turn-off energy, EOFF(diode) - (mJ) 3.5 3.0 Tj = 125C VGE = 15V VCE = 300V Rg = 5 Rg = 10 2.5 2.0 1.5 1.0 0.5 0 0 Rg = 15 Diode turn-off energy, EOFF(diode) - (mJ) Rg = 10 Rg = 15 50 100 150 200 250 Collector current, IC - (A) 300 350 50 100 150 200 250 Collector current, IC - (A) 300 350 Fig.9 Typical diode turn-off energy vs collector current Fig.10 Typical diode turn-off energy vs collector current 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S 1400 1200 1000 td(off) Tj = 125C VGE = 15V VCE = 300V Rg = 5 450 400 350 Foward current, IF - (A) Switching times, - (ns) 300 250 Tj = 125C 200 Tj = 25C 800 600 400 200 tr 0 0 50 250 100 150 200 Collector current, IC - (A) 300 350 150 100 50 0 0 0.2 0.4 td(on) tf 0.6 0.8 1.0 1.2 1.4 Foward voltage, VF - (V) 1.6 1.8 Fig.11 Typical switching characteristics Fig.12 Diode typical forward characteristics 700 10000 600 Collector current, IC - (A) Collector current, IC - (A) 500 400 300 200 100 0 0 Tj = 125C Vge = 15V Rg = 5 600 200 400 Collector-emitter voltage, Vce - (V) Fig.13 Reverse bias safe operating area 800 1000 IC max. (single pulse) 50s IC 100s m ax .D 100 tp = 1ms C (c on tin uo us ) 10 1 1 10 100 Collector-emitter voltage, Vce - (V) 1000 Fig.14 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP350MHB06S 1000 Transient thermal impedance, Zth (j-c) - (C/kW ) Diode 100 Transistor 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 11 62 0.8 48 0.3 6 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 0.3 3x M6 8 38max 23 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP350MHB06S http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4923-5 Issue No. 5.0 October 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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