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| GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm * * * Enhancement-mode High speed: tf = 0.30 s (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg 3/4 Rating 600 25 60 120 60 120 200 150 -55~150 0.8 Unit V V A A JEDEC W C C Nm 2-21F2C JEITA TOSHIBA Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT60J321 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) 5 9 15 V 0 -15 V IF = 60 A, VGE = 0 IF = 60 A, VGE = 0, di/dt = -100 A/ms 3/4 18 W Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 10 A, VGE = 15 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3/4 3/4 3.0 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1.2 1.55 13500 0.25 0.35 0.30 0.80 1.5 0.1 3/4 3/4 Max 500 1.0 6.0 1.7 1.9 3/4 3/4 Unit nA mA V V pF 3/4 3/4 3/4 300 V 3/4 3/4 3/4 3/4 3/4 3/4 0.50 ms 3/4 2.0 0.2 0.625 0.96 V ms C/W C/W 3/4 2 2002-01-18 GT60J321 IC - VCE 100 Common emitter Tc = 25C 80 15 20 10 VCE - VGE Common emitter (V) 10 Tc = -40C 8 (A) IC 60 VGE = 8 V 40 Collector-emitter voltage VCE 6 120 4 30 2 IC = 10 A 0 0 Collector current 60 20 0 0 0.4 0.8 1.2 1.6 2.0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 Common emitter 10 VCE - VGE Common emitter (V) Tc = 25C 8 (V) Tc = 125C 8 VCE Collector-emitter voltage 6 60 4 30 2 IC = 10 A 0 0 120 Collector-emitter voltage VCE 6 120 4 30 2 IC = 10 A 0 0 60 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter 80 3 VCE (sat) - Tc Common emitter VGE = 15 V Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V (A) 60 Tc = 125C IC 2 120 60 30 Collector current 40 25 1 IC = 10 A 20 -40 0 0 4 8 12 16 20 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-18 GT60J321 VCE, VGE - QG 20 C - VCE 50000 30000 Cies Collector-emitter voltage VCE (25 V) Gate-emitter voltage VGE (V) 16 Common emitter RL = 5 W Tc = 25C (pF) Capacitance C 12 8 10000 5000 3000 1000 500 300 Common emitter VGE = 0 f = 1 MHz Tc = 25C 3 10 30 100 4 100 0 0 100 200 300 400 500 50 1 Coes Cres 300 1000 3000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching time - RG 3 Common emitter VCC = 300 V VGG = 15 V IC = 60 A Tc = 25C 300 Safe operating area IC max (pulsed) 10 ms* 100 ms* 1 ms* 10 ms* 10 5 3 DC operation RE 100 (ms) 1 IC max (continuous) Switching time 0.5 0.3 toff tf ton tr 0.1 Collector current IC 0.05 3 5 10 30 50 100 300 (A) 30 Gate resisstance RG (W) *: Single non-repetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 0.5 1 30 100 300 1000 Collector-emitter voltage VCE (V) Switching time - IC 3 Common emitter VCC = 300 V VGG = 15 V RG = 18 W Tc = 25C toff 0.5 0.3 tf Switching time (ms) 1 ton 0.1 tr 0.05 0 20 40 60 80 Collector current IC (A) 4 2002-01-18 GT60J321 Reverse bias SOA 300 10 2 rth (t) - tw Tc = 25C 50 30 Transient thermal impedance rth (t) (C/W) 100 10 1 (A) Collector current IC 10 0 Diode IGBT 10-1 10 5 3 Tj < 125C = VGE = 15 V RG = 18 W 3 10 30 100 300 1000 10-2 1 1 10-3 10-4 10-3 10-2 10-1 10 0 10 1 10 2 Collector-emitter voltage VCE (V) Pulse width tw (s) IF - VF 100 Common collector VGE = 0 30 50 Irr, trr - IF 500 300 Peak reverse recovery current Irr (A) 80 Forward current IF 60 10 trr 100 40 Tc = 125C 5 Irr 3 Common collector di/dt = -100 A/ms VGE = 0 Tc = 25C 10 20 30 40 50 50 30 20 25 -40 0 0 0.4 0.8 1.2 1.6 2.0 1 0 10 60 Forward voltage VF (V) Forward current IF (A) Cj - VR 1000 f = 1 MHz Tc = 25C 200 20 Irr, trr - di/dt (A) Common collector 16 IF = 60 A Tc = 25C (pF) (ns) 500 300 trr Peak reverse recovery current Cj Reverse recovery time Irr Junction capacitance 12 Irr 8 trr 100 50 30 RE 4 10 1 3 5 10 30 50 100 300 500 0 0 0 40 80 120 160 200 240 Reverse voltage VR (V) di/dt (A/ms) 5 2002-01-18 Reverse recovery time trr (A) (ns) GT60J321 RESTRICTIONS ON PRODUCT USE 100 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-18 |
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