 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014. Features * 63A, 600V at TC = 25oC * Typical Fall Time . . . . . . . . . . . . . . . . 230ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60C3D 600 63 30 25 252 20 30 60A at 600V 208 1.67 -40 to 150 260 4 15 UNITS V A A A A V V W W/oC oC oC s s Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 15 3.0 VCE(PK) = 480V VCE(PK) = 600V 200 60 TYP 25 1.5 1.7 5.2 MAX 250 3.0 1.8 2.0 6.0 100 UNITS V V A mA V V V nA A A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, VGE = 15V, RG = 3, L = 100H Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8.1 162 216 40 45 320 230 1050 2500 1.75 180 250 400 275 2.2 V nC nC ns ns ns ns J J V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage td(ON)I trI td(OFF)I tfI EON EOFF VEC TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3, L = 100H IEC = 30A - (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Electrical Specifications PARAMETER Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified SYMBOL trr TEST CONDITIONS IEC = 30A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s Thermal Resistance RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. MIN TYP 52 42 MAX 60 50 0.6 1.3 UNITS ns ns oC/W oC/W Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 150 125 100 TC = 150oC 75 TC = 25oC 50 25 0 4 6 8 10 VGE, GATE TO EMITTER VOLTAGE (V) 12 TC = -40oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V 150 125 9.5V 100 75 50 7.0V 25 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 9.0V 8.5V 8.0V 7.5V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC VGE = 15.0V 12.0V 10.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 125 100 ICE, COLLECTOR TO EMITTER CURRENT (A) 150 TC = -40oC 150 125 100 75 50 25 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) PULSE DURATION = 250s DUTY CYCLE <0.5% VGE = 15V TC = 150oC TC = 25oC TC = 25oC 75 TC = 150oC 50 25 0 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 TC = -40oC FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Typical Performance Curves 70 ICE , DC COLLECTOR CURRENT (A) VGE = 15V 60 50 40 30 20 10 0 25 (Continued) 25 500 450 20 ISC 400 350 15 300 250 10 tSC 150 5 10 100 14 VGE , GATE TO EMITTER VOLTAGE (V) 11 12 13 15 200 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 360V, RG = 25, TJ = 125oC 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE TEMPERATURE 200 td(ON)I , TURN-ON DELAY TIME (ns) 500 td(OFF)I , TURN-OFF DELAY TIME (ns) FIGURE 6. SHORT CIRCUIT WITHSTAND TIME TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V 400 VGE = 15V VGE = 10V 200 100 VGE = 10V 50 40 30 20 VGE = 15V 300 10 10 20 30 40 50 60 100 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 50 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 500 TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V 500 400 TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V trI , TURN-ON RISE TIME (ns) tfI , FALL TIME (ns) VGE = 10V 100 300 VGE = 10V 200 VGE = 15V VGE = 15V 10 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 100 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B ISC, PEAK SHORT CIRCUIT CURRENT (A) 60 HGTG30N60C3D Typical Performance Curves 8.0 EON , TURN-ON ENERGY LOSS (mJ) 7.0 6.0 5.0 VGE = 10V 4.0 3.0 2.0 1.0 VGE = 15V 0 10 20 30 40 50 60 (Continued) 6.0 EOFF , TURN-OFF ENERGY LOSS (mJ) 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10 TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V TJ = 150oC, RG = 3, L = 100H, VCE(PK) = 480V ICE , COLLECTOR TO EMITTER CURRENT (A) 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 500 fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC RG = 3, L = 100H 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.6oC/W 1 5 10 20 30 40 ICE, COLLECTOR TO EMITTER CURRENT (A) 60 VGE = 10V FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 250 TJ = 150oC, VGE = 15V, L = 100H 200 150 LIMITED BY CIRCUIT 10 100 50 0 0 100 200 300 400 500 600 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA FREQUENCY = 400kHz 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 COES 1000 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) CIES VCE , COLLECTOR TO EMITTER VOLTAGE (V) 8000 600 IG (REF) = 3.54mA, RL = 20, TC = 25oC 15 VGE , GATE TO EMITTER VOLTAGE (V) 480 VCE = 600V 360 12 9 240 VCE = 400V VCE = 200V 6 120 3 0 0 40 80 120 QG , GATE CHARGE (nC) 160 0 200 FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Typical Performance Curves ZJC , NORMALIZED THERMAL RESPONSE (Continued) 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 101 PD t2 t1 10-4 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 200 60 TC = 25oC, dIEC/dt = 100A/s IEC , FORWARD CURRENT (A) 50 tr , RECOVERY TIMES (ns) trr 40 30 20 10 0 100oC 10 ta tb 150oC 1 0 25oC 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) 2.5 3.0 1 5 10 IEC , FORWARD CURRENT (A) 30 FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms L = 100H RHRP3060 VGE 90% 10% EOFF EON RG = 3 + VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I - FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
Price & Availability of HGTG30N60C3D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |