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| HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360. Features * Ignition Energy = 340mJ at TJ (STARTING) = 25oC * Typical Internal Clamp Voltage = 410V at TJ = 25oC * Logic Level Gate Drive * ESD Gate Protection * TJ = 175oC * Internal Series and Shunt Gate Resistors * 24V Reverse Battery Capability * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER HGT1S14N41G3VLS HGTP14N41G3VL PACKAGE TO-263AB TO-220AB BRAND 14N41GVL 14N41GVL Packaging JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A G COLLECTOR (FLANGE) E Symbol COLLECTOR R1 GATE R2 JEDEC TO-220AB E C G EMITTER COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1S14N41G3VLS, HGTP14N41G3VL Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 3 mH, T C = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L = 3 mH, TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . . . . . . . . ESD Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . . . . . . . . ESD Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 430 445 24 25 18 10 15 11.5 340 136 0.91 -55 to 175 -55 to 175 5 2 300 260 UNITS V V V A A V A A mJ W W/oC oC oC kV kV oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. May be exceeded if I GEM is limited to 10mA. Electrical Specifications PARAMETER TJ = 25oC, Unless Otherwise Specified SYMBOL BVCER BVCES VGEP QG(ON) BVCE(CL) BVECS ICES TEST CONDITIONS IC = 10mA, RG = 1k, VGE = 0V, TJ = -40oC to 150oC (Figure 17) IC = 10mA, VGE = 0V, TJ = -40oC to 150oC IC = 10A, VCE = 12V IC = 10A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, RG = 1k IC = 10mA VCE = 350V, VGE = 0V (Figure 13) VCE = 15V, VGE = 0V IECS VGE(TH) VCE(ON) VCE(ON) VEC = 24V, VGE = 0V (Figure 13) TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC TJ = -40oC TJ = 25oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = 175oC MIN 380 395 380 24 1.3 10 TYP 410 425 3 26 410 28 1.8 1.6 1.7 1.3 1.25 1.45 1.55 1.65 1.8 80 18 MAX 430 445 430 40 200 10 50 1 40 2.2 2.65 2.75 1.7 1.6 1.7 1.8 2.0 2.3 26 UNITS V V V nC V V A A A A mA mA V V V V V V V V V k Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Emitter to Collector Leakage Current Gate to Emitter Threshold Voltage Collector to Emitter On-State Voltage Collector to Emitter On-State Voltage IC = 1mA, VCE = VGE (Figure 12) IC = 10A, VGE = 3.7V (Figures 3 to 9) IC = 6A, VGE = 4.0V (Figures 3 to 9) IC = 10A, VGE = 4.5V (Figures 3 to 9) IC = 14A, VGE = 5V (Figures 3 to 9) Gate Series Resistance Gate to Emitter Resistance (c)2001 Fairchild Semiconductor Corporation R1 R2 HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Electrical Specifications PARAMETER Gate to Emitter Leakage Current Gate to Emitter Breakdown Voltage Current Turn-On Delay Time Resistive Load Current Turn-On Rise Time Resistive Load Current Turn-Off Time - Inductive Load Current Turn-Off Time - Resistive Load Inductive Use Test TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL IGES BVGES td(ON)I trI td(OFF)I + tfI td(OFF)I + tfI ISCIS RJC VGE = 10V IGES = 5mA VDD = 14V, R G = 1k, VGE = 5V (Figure 14) VDD = 14V, R G = 1k, VGE = 5V (Figure 14) IC = IC = IC = IC = 11.5A, TJ = 25oC 6.5A, TJ = 150oC 11.5A, TJ = 25oC 6.5A, TJ = 150oC TEST CONDITIONS MIN 384 12 11.5 15 TYP 555 14 0.9 0.75 3.2 2.7 9 10 MAX 1000 1.5 1.6 4.5 3.8 20 15 1.1 UNITS A V s s s s s s A A oC/W IC = 6.5A, RG = 1k, VGE = 5V, L = 300H, VDD = 300V, TJ = 150oC (Figure 14) IC = 6.5A, RG = 1k, VGE = 5V, RL = 46, VDD = 300V, TJ = 25oC (Figure 14) TC = 150oC L = 3mH, VG = 5V, RG = 1k (Figures 1, 2) TC = 25oC (Figure 18) Thermal Resistance Typical Performance Curves ISCIS, INDUCTIVE SWITCHING CURRENT (A) 60 Unless Otherwise Specified ISCIS, INDUCTIVE SWITCHING CURRENT (A) 40 ISCIS CAN BE LIMITED BY gfs AT V GE = 5V 32 RG = 1k, VGE = 5V 52 44 36 28 20 12 4 40 80 120 160 200 tAV, TIME IN AVALANCHE (s) TJ = 25oC ISCIS CAN BE LIMITED BY gfs AT VGE = 5V 24 16 TJ = 25oC 8 RG = 1k, VGE = 5V 0 0 2 4 6 TJ = 150oC TJ = 150oC 8 10 L, INDUCTANCE (mH) FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs. INDUCTA N C E VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.3 VGE = 4.0V VGE = 3.7V 1.2 1.62 ICE = 10A 1.58 1.54 VGE = 3.7V 1.50 1.46 1.42 1.38 VGE = 5.0V 1.34 -50 25 VGE = 4.5V 100 175 VGE = 4.0V 1.1 VGE = 4.5V VGE = 5.0V ICE = 6A 1.0 -50 25 100 175 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE (c)2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250s Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 VGE = 5.0V DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250s VGE = 5.0V 30 VGE = 4.5V 30 VGE = 4.5V 20 VGE = 3.7V 10 VGE = 4.0V 20 VGE = 3.7V VGE = 4.0V 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) 50 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s VGE = 5.0V VGE = 4.5V 60 50 40 30 DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250s VGE = 5.0V 40 VGE = 4.5V 30 VGE = 3.7V 20 VGE = 4.0V 10 VGE = 3.7V 20 10 0 VGE = 4.0V 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) 60 VGE 50 40 30 20 10 0 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V TJ = 25oC ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 32 TJ = 150oC TJ = 25oC 24 16 8 TJ = -40oC 0 1 2 3 4 5 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 10. TRANSFER CHARACTERISTIC (c)2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves 28 ICE , DC COLLECTOR CURRENT (A) VGE(TH) , THRESHOLD VOLTAGE (V) VGE = 5V 24 20 16 12 8 4 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) Unless Otherwise Specified (Continued) 2.2 ICE = 1mA 2.0 1.8 1.6 1.4 1.2 1.0 -50 VCE = VGE 25 100 175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10000 VECS = 24V SWITCHING TIME (s) 1000 16 ICE = 6.5A, VGE = 5V, RG = 1k 14 RESISTIVE tOFF 12 10 INDUCTIVE tOFF 8 6 RESISTIVE tON 4 2 25 LEAKAGE CURRENTS (A) 100 VCES = 300V 10 VCES = 250V 1 0.1 25 50 75 100 125 150 175 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE 2400 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) 1600 CIES 1200 800 CRES 400 0 COES 0 5 10 15 20 25 VGE, GATE TO EMITTER VOLTAGE (V) 8 IG(REF) = 1mA, RL = 1.25, TJ = 25oC 6 VCE = 12V 4 2 VCE = 6V 0 0 8 16 24 32 40 48 56 VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B HGT1S14N41G3VLS, HGTP14N41G3VL Typical Performance Curves 412 BVCER , BREAKDOWN VOLTAGE (V) 408 404 400 396 392 388 384 380 376 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (k) TJ (oC) -55 25 150 175 ICER = 10mA Unless Otherwise Specified (Continued) FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms 3mH VDD R or L C PULSE GEN RG DUT G E 5V RG = 1k G DUT + VDD LOAD C E FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B |
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