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| 01/99 B-29 IF142 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range - 20 V 10 mA 375 mW 3 mW/C - 65C to 200C At 25C free air temperature: Static Electrical Characteristics IF142 Min Max Unit Process NJ14AL Test Conditions Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics V(BR)GSS IGSS VGS(OFF) VGS VGS(F) IDSS - 25 - 0.1 - 0.2 -6 -5 1 15 V nA nA V V V mA IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = O, IG = 1 mA VDS = 15V, VGS = OV TA = 150C 5 Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Yfs Yos Ciss Crss 3.5 0.05 3 0.6 Typ mS S pF pF VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV VDS = 15V, VGS = OV f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz Equivalent Short Circuit Input Noise Voltage eN 4 nV/Hz VDS = 12V, VGS = OV f = 10 Hz TO236AB Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 |
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