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| D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating - 40 V 10 mA 300 mW 2.4 mW/C At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure gfs Ciss Crss NF 30 V(BR)GSS IGSS VGS(OFF) IDSS - 0.3 5 Min - 40 IFN147 Typ Max -1 -1 - 1.2 30 Unit V nA A V mA Process NJ450 Test Conditions IG = - 1 A, VDS = OV VGS = - 30V, VDS = OV VGS = - 30V, VDS = OV VDS = 10V, ID = 1 A VDS = 10V, VGS = OV TA = 150C 40 75 15 1 10 mS pF pF dB dB VDS = 10V, VGS = OV IDSS = 5 mA VDS = 10V, VGS = OV VDS = 10V, ID = O VDS = 10V, ID = 5 mA RG = 100 f = 1 kHz f = 1 kHz f = 1 Hz f = 1 kHz f = 100 Hz TO18 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
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