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| PD- 95565 IRG4BC20UD-SPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard D2Pak package * Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A N-channel n-channel Benefits * Generation 4 IGBTs offers highest efficiencies available * Optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 6.5 52 52 7.0 52 20 60 24 -55 to +150 C 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.5 --- 1.44 Max. 2.1 --- 40 --- Units C/W g (oz) www.irf.com 1 07/15/04 IRG4BC20UD-SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- VCE(on) Collector-to-Emitter Saturation Voltage --- --- --- Gate Threshold Voltage 3.0 VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- gfe Forward Transconductance 1.4 Zero Gate Voltage Collector Current --- ICES --- VFM Diode Forward Voltage Drop --- --- IGES Gate-to-Emitter Leakage Current --- Typ. Max. Units --- --- V 0.69 --- V/C 1.85 2.1 2.27 --- V 1.87 --- --- 6.0 -11 --- mV/C 4.3 --- S --- 250 A --- 1700 1.4 1.7 V 1.3 1.6 --- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 41 IC = 6.5A 6.8 nC VCC = 400V See Fig. 8 16 VGE = 15V --- TJ = 25C --- ns IC = 6.5A, VCC = 480V 140 VGE = 15V, RG = 50 170 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 0.3 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 6.5A, VCC = 480V --- VGE = 15V, RG = 50 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt 200A/s --- A/s TJ = 25C See Fig. --- TJ = 125C 17 2 www.irf.com IRG4BC20UD-SPBF 12 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 13W 10 Load Current (A) 8 6 60% of rated voltage 4 2 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 10 TJ = 150C TJ = 25C 1 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH 10 0.1 4 6 8 V CC = 10V 5s PULSE WIDTH A 10 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com A 3 IRG4BC20UD-SPBF 14 Maximum DC Collector Current (A) 12 VCE , Collector-to-Emitter Voltage (V) VGE = 15V 2.6 V GE = 15V 80s PULSE WIDTH IC = 13A 2.2 10 8 1.8 IC = 6.5A 6 4 1.4 I C = 3.3A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM 0.1 0.02 0.01 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 1 t2 0.01 0.00001 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20UD-SPBF 1000 VGE , Gate-to-Emitter Voltage (V) A C, Capacitance (pF) 800 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 6.5A 16 Cies 600 12 Coes 400 8 200 Cres 4 0 1 10 0 0 5 10 15 20 25 A 30 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.32 Total Switching Losses (mJ) 0.31 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 6.5A 10 R G = 50 V GE = 15V V CC = 480V IC = 13A 1 IC = 6.5A 0.30 I C = 3.3A 0.29 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20UD-SPBF 1.2 0.9 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ V CC V GE = 50 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 100 SAFE OPERATING AREA 10 0.6 0.3 1 0.0 0 2 4 6 8 10 12 A 0.1 1 10 100 1000 14 IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20UD-SPBF 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C IF = 16A t rr - (ns) 60 I F = 8.0A I IRRM - (A) I F = 16A 10 40 IF = 8.0A I F = 4.0A I F = 4.0A 20 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 500 10000 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C 300 di(rec)M/dt - (A/s) Q RR - (nC) I F = 16A 200 IF = 4.0A 1000 IF = 8.0A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 di f /dt - (A/s) 1000 100 100 1000 di f /dt - (A/s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20UD-SPBF Same type device as D.U.T. 90% 80% of Vce 430F D.U.T. Vge V C 10% 90% td(off) 10% IC 5% t d(on) tr tf t=5s Eon Ets= (Eon +Eoff ) Eoff Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt tx tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20UD-SPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20UD-SPBF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB LED ON WW 02, 2000 IN T HE AS S E MB LY LINE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBE R F 530S DAT E CODE YE AR 0 = 2000 WEE K 02 LINE L ASS E MBLY LOT CODE OR INT ERNAT IONAL RE CT IFIE R LOGO AS S EMBLY LOT CODE PART NUMBE R F530S DAT E CODE P = DE S IGNAT E S LEAD-F REE PRODUCT (OPT IONAL) YE AR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE 10 www.irf.com IRG4BC20UD-SPBF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) Dimensions are shown in millimeters (inches) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (Figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (Figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 11 |
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