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| Previous Datasheet Index Next Data Sheet PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) 3.0V @VGE = 15V, I C = 6.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 13 6.5 52 52 20 5 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 2.1 -- 80 -- Units C/W g (oz) Revision 0 C-651 To Order Previous Datasheet Index Next Data Sheet IRGBC20U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.69 -- V/C VGE = 0V, I C = 1.0mA -- 2.2 3.0 IC = 6.5A V GE = 15V -- 2.8 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 6.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.4 4.3 -- S VCE = 100V, I C = 6.5A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 22 IC = 6.5A 2.5 3.8 nC VCC = 400V See Fig. 8 7.8 13 VGE = 15V 22 -- TJ = 25C 12 -- ns IC = 6.5A, V CC = 480V 71 95 VGE = 15V, R G = 50 91 280 Energy losses include "tail" 0.11 -- 0.14 -- mJ See Fig. 9, 10, 11, 14 0.25 0.50 23 -- TJ = 150C, 13 -- ns IC = 6.5A, V CC = 480V 140 -- VGE = 15V, R G = 50 200 -- Energy losses include "tail" 0.45 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 330 -- VGE = 0V 65 -- pF VCC = 30V See Fig. 7 6.0 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-652 To Order Previous Datasheet Index Next Data Sheet IRGBC20U 20 For b oth : Triangula r w ave: 16 LO A D CU R R E N T (A ) D uty c yc le: 50% TJ = 125C T sink = 90C G ate d rive as s pec ified P o w e r D issip a tion = 1 3 W S quare w av e: 60% of ra ted voltage C lamp voltage: 80% of rated 12 8 4 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , Collector-to-E m itter C urrent (A) TJ = 2 5C IC , C ollector-to-E m itter Current (A ) 10 TJ = 1 50 C TJ = 1 50 C 10 T J = 2 5C 1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itter V olta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-653 To Order Previous Datasheet Index Next Data Sheet IRGBC20U 14 V G E = 1 5V 4.0 V G E = 15 V 80 s P UL S E W IDTH M aximum D C Collector Current (A ) 12 V C E , C ollector-to-E m itter V oltage (V ) 3.5 10 I C = 1 3A 3.0 8 2.5 I C = 6.5A 6 2.0 I C = 3.3 A 4 2 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 PD M 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-654 To Order Previous Datasheet Index Next Data Sheet IRGBC20U 700 600 V G E , G ate-to-E mitter V oltage (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 6.5A 16 C, C apacitance (pF) 500 400 Cies Coes 12 300 8 200 100 Cres 4 0 1 10 100 0 0 4 8 12 16 20 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .35 0 .34 T o tal S w itc hing Los se s (m J) Total S witching Losses (m J) VC C VG E TC IC = 48 0V = 15V = 25 C = 6.5A 10 R G = 50 V GE = 1 5V V CC = 4 8 0V 1 I C = 13A I C = 6.5A 0 .33 I C = 3.3 A 0 .32 20 25 30 35 40 45 50 55 0.1 -60 -40 -20 0 20 40 60 80 100 120 14 0 160 R G , G ate R esistance ( ) W TC , C ase Tem peratu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-655 To Order Previous Datasheet Index Next Data Sheet IRGBC20U 1.2 1.0 I C , C o lle c to r-to -E m itte r C u rre n t (A ) T o ta l S w itc h in g L o s s e s (m J ) RG TC VCC VGE = 50 = 1 50C = 48 0V = 1 5V 1000 VG E E 20 V G= T J = 125 C 100 0.8 S A FE O P E R A TIN G A R E A 10 0.6 1 0.4 0.2 0 3 6 9 12 15 0.1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-656 To Order |
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