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PD - 91740B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7360SE RDS(on) Radiation Level RDS(on) 100K Rads (Si) 0.20 ID 24A
IRHNB7360SE 400V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
(R)
SMD-3
International Rectifiers RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page
Pre-Irradiation
Units
24 15 96 300 2.4 20 500 24 30 3.0 -55 to 150 300 (for 5 sec.) 3.5 (Typical)
A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
6/4/01
IRHNB7360SE
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
400 2.5 4.0
Electrical Characteristics
Parameter
Typ Max Units
0.51 4.0 0.20 0.21 4.5 50 250 100 -100 250 60 120 35 100 120 100 V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 15A VGS = 12V, ID = 24A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 15A VDS= 320V ,VGS=0V VDS = 320V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 24A VDS = 200V VDD =200V, ID =24A, VGS =12V, RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

4000 1000 460

pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
24 96 1.4 750 14
Test Conditions
A
V nS C Tj = 25C, IS = 24A, VGS = 0V Tj = 25C, IF = 24A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
M i n Typ Max Units
1.6 0.42
C/W
Test Conditions
Soldered to a 2 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Pre-Irradiation
IRHNB7360SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ On-State Resistance (SMD-3) Diode Forward Voltage# $
Min
400 2.0
100K Rads (Si)
Max
4.5 100 -100 50 0.20 0.20 1.4
Units
V nA A V
Test Conditions "
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 320V, VGS=0V VGS = 12V, ID = 15A VGS = 12V, ID = 15A VGS = 0V, ID = 24A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm )) 28 36.8 Energy (MeV) 285 305 Range (m) 43 39 V,5 (V) @V/5=0V @V/5=-5V @V/5=-10V @V/5=-15V @V/5=-20V 325 325 325 325 325 325 325 325 325 320
400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 -25 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNB7360SE
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
1
1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
0.1 0.1
20us PULSE WIDTH TJ = 150 o C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
TJ = 150 C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C
23A ID = 24A
I D , Drain-to-Source Current (A)
2.5
2.0
1.5
1
1.0
0.5
0.1
V DS = 50V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNB7360SE
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 23A 24A
C, Capacitance (pF)
6000
16
VDS = 320V VDS = 200V VDS = 80V
Ciss
4000
12
Coss
2000
8
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200 240
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
ID , Drain Current (A)
TJ = 150 C
100 10us
1
10
100us
TJ = 25 C V GS = 0 V
0.6 1.0 1.4 1.8 2.2
0.1 0.2
1
TC = 25 C TJ = 150 C Single Pulse
10 100
1ms
10ms 10us 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNB7360SE
Pre-Irradiation
25
VDS VGS
RD
20
RG
D.U.T.
+
I D , Drain Current (A)
-VDD
15
VGS
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNB7360SE
EAS , Single Pulse Avalanche Energy (mJ)
1000
TOP
800
15V
BOTTOM
ID 10A 14A 24A 22A
VDS
L
DRIVER
600
RG
D.U.T.
IAS tp
+ - VDD
V/5 20V
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0
25
50
75
100
125
150
V(BR)DSS tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNB7360SE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 1.74 mH Peak IL = 24A, VGS = 12V ISD 24A, di/dt 120A/s, VDD 400V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 320 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions SMD-3
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 06/01
8
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