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PD-95837
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0 IRHY63C30CM 300K Rads (Si) 3.0 ID 3.4A 3.4A
IRHY67C30CM 600V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 3.4 2.1 13.6 75 0.6 20 97 3.4 7.5 8.1 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical)
g
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1
08/14/06
IRHY67C30CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
600 -- -- 2.0 3.7 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.51 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 3.0 4.0 -- 10 25 100 -100 44 14 9.0 18 7.5 31 14 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 2.1A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 2.1A A VDS= 480V ,VGS=0V VDS = 480V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 3.4A VDS = 300V VDD = 300V, ID = 3.4A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1267 79 1.1 1.1
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- 3.4 -- 13.6 -- 1.0 -- 741 -- 2.1
Test Conditions
A
V ns nC Tj = 25C, IS = 3.4A, VGS = 0V A Tj = 25C, IF = 3.4A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHY67C30CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage Up to 300K Rads (Si)
Min
600 2.0 -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 480V, VGS= 0V VGS = 12V, ID = 2.1A VGS = 0V, ID = 3.4A
-- 4.0 100 -100 10 2.9 1.0
Part numbers: IRHY67C30CM and IRHY63C30CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Kr Xe Au
LET
(MeV/(mg/cm )) 32.4 56.2 89.5
2
Energy
(MeV) 679 1060 1555
Range
(m) 83.3 83.5 84
@VGS = 0V
VDS (V)
@VGS = -4V @VGS = -12V @VGS = - 20V
600 600 600
600 600 600
600 600 -
600 -
800 600 VDS 400 200 0 0 -5 -10 VGS -15 -20 Kr Xe Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHY67C30CM
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
VGS TOP 15V 12V 10V 6.0V 5.5V 5.0V BOTTOM 4.5V
10
VGS 15V 12V 10V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
ID, Drain-to-Source Current (A)
4.5V
1
1
4.5V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
10
T J = 25C T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.4A
2.0
ID, Drain-to-Source Current (A)
1.5
1
1.0
0.1 VDS = 50V 60s PULSE WIDTH 15 0.01 4 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY67C30CM
2000
VGS, Gate-to-Source Voltage (V)
1600
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 3.4A 16 VDS = 6 480V VDS = 300V VDS = 120V
C, Capacitance (pF)
1200
Ciss
12
800
8
400
Coss Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 4 8 12 16 20 24 28 32 36 40
0 1 10 100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10
10 T J = 150C 1
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
100s
1ms
0.1 Tc = 25C Tj = 150C Single Pulse 10 100 VDS , Drain-to-Source Voltage (V)
0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
10ms
0.01
1000
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHY67C30CM
Pre-Irradiation
4
VGS
VDS
RD
ID, Drain Current (A)
3
RG VGS
D.U.T.
+
-V DD
2
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
1
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10
P DM
SINGLE PULSE ( THERMAL RESPONSE )
t1 t2
0.1
0.01 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY67C30CM
200
EAS , Single Pulse Avalanche Energy (mJ)
15V
TOP
160
BOTTOM
120
ID 1.5A 2.2A 3.4A
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
A
80
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
40
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY67C30CM
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 16.7mH Peak IL = 3.4A, VGS = 12V A ISD 3.4A, di/dt 560A/s, VDD 600V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 480 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2006
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