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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 21N50Q IXFT 21N50Q VDSS = 500 V = 21 A ID25 RDS(on) = 0.25 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C Maximum Ratings 500 500 30 40 21 84 21 30 1.5 V V V V A A A mJ mJ V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 15 280 -55 to +150 150 -55 to +150 (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 Features l l 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 25 1 0.25 V V nA A mA l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V l Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved 98718B(02/04) IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 21 3000 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 110 25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 (External), 28 51 12 84 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 20 35 0.45 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21 84 1.3 250 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 0.85 8 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH 21N50Q IXFT 21N50Q Fig. 1. Output Characteristics @ 25C 22 20 18 16 VGS = 10V 8V 7V 60 55 50 45 VGS = 10V 8V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 5V 4.5V 6V 40 35 30 25 20 15 10 5 0 0 3 6 9 12 15 5V 5.5V 6.5V 6V 5.5V V D S - Volts Fig. 3. Output Characteristics @ 125C 22 20 18 16 VGS = 10V 8V 7V 6V 5.5V 2.8 2.5 VGS = 10V V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 21A I D = 10.5A I D - Amperes 14 12 10 8 6 4 2 0 0 2 4 6 8 5V 4.5V 10 12 14 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 3.4 3.1 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 24 21 0.5 ID25 Value vs. ID VGS = 10V TJ = 125C R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 5 10 15 20 18 I D - Amperes TJ = 25C 15 12 9 6 3 0 I D - Amperes 25 30 35 40 45 50 55 60 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved 98718B(02/04) IXFH 21N50Q IXFT 21N50Q Fig. 7. Input Adm ittance 35 30 25 40 35 30 TJ = -40C 25C 125C Fig. 8. Transconductance g f s - Siemens 5 5.5 6 6.5 I D - Amperes 25 20 15 10 5 0 20 15 10 5 0 3.5 4 4.5 TJ = 125C 25C -40C 0 5 10 15 20 25 30 35 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 60 10 9 50 40 8 7 VDS = 250V I D = 10.5A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 25C 0.8 0.9 1 1.1 6 5 4 3 2 1 30 TJ = 125C 20 10 0 0.4 0.5 0.6 0 V S D - Volts 0.7 0 10 20 30 40 50 60 70 80 90 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance 1.00 Fig. 11. Capacitance 10000 f = 1MHz Capacitance - picoFarads 1000 R( t h ) J C - C / W 30 35 40 C iss C oss 100 C rss 0.10 10 0 5 10 15 0.01 V D S - Volts 20 25 1 Pulse Width - milliseconds 10 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 |
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