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| IGBT Preliminary Data Sheet IXGA 20N100 VCES IXGP 20N100 IC25 VCE(sat) = 1000 V = 40 A = 3.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 47 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 1000 1000 20 30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g * International standard packages * * MOS Gate turn-on - drive simplicity Applications JEDEC TO-220AB and TO-263AA High current handling capability Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 Min. 1000 2.5 TJ = 25C TJ = 125C Characteristic Values Typ. Max. V 5.0 250 1 100 2.2 3.0 V A mA nA V * * * * * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge Advantages Easy to mount with one screw Reduces assembly time and cost High power density (c) 2003 IXYS All rights reserved DS98615B(01/03) IXGA 20N100 IXGP 20N100 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 1750 100 38 90 73 13 26 30 30 350 280 3.5 30 30 0.65 700 520 6.5 0.83 700 700 8.0 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side Characteristic Values Min. Typ. Max. 12 16 S TO-220 AB Dimensions 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Min. Recommended Footprint (Dimensions in inches and mm) Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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