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| HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 600 600 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W C C C C G = Gate, E = Emitter, Features * International standard packages JEDEC TO-247 and surface mountable TO-268 * High current handling capability * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5 200 1 100 2.1 2.5 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE * PFC circuits * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15 V Advantages * High power density * Very fast switching speeds for high frequency applications IXYS reserves the right to change limits, test conditions, and dimensions. 97538B (7/00) (c) 2000 IXYS All rights reserved 1-4 IXGH 32N60C IXGT 32N60C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 190 50 110 IC = IC110, VGE = 15 V, VCE = 0.5 VCES 22 40 Inductive load, TJ = 25C IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 150C IC = IC110, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 20 85 55 0.32 25 25 0.30 110 105 0.85 170 160 1.25 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXGH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC110; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 0.62 K/W (IXGH32N60C) 0.25 K/W TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH 32N60C IXGT 32N60C 100 TJ = 25C 200 VGE = 15V 13V 11V 9V TJ = 25C VGE = 15V 80 160 13V 11V IC - Amperes IC - Amperes 60 40 20 5V 120 9V 80 40 0 7V 5V 7V 0 0 1 2 3 4 5 0 2 4 6 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics 100 TJ = 125C VGE = 15V 11V 9V Fig. 2. Extended Output Characteristics 1.50 13V VGE = 15V IC = 64A VCE (sat) - Normalized 80 1.25 IC = 32A IC - Amperes 60 40 20 5V 7V 1.00 IC = 16A 0.75 0 0 1 2 3 4 5 0.50 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 VCE = 10V 10000 Ciss f = 1Mhz 80 Capacitance - pF IC - Amperes 1000 Coss 60 40 TJ = 125C 100 Crss 20 TJ = 25C 0 3 4 5 6 7 8 9 10 10 0 5 10 15 20 25 30 35 40 VGE - Volts VCE-Volts Fig. 5. Admittance Curves Fig. 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-4 IXGH 32N60C IXGT 32N60C 1.00 TJ = 125C 4 E(OFF) RG = 10 4 TJ = 125C 8 E(ON) - millijoules E(ON) - millijoules 0.75 E(ON) 3 3 E(ON) IC = 64A E(OFF) E(OFF) - milliJoules 6 E(OFF) - millijoules 0.50 2 2 E(ON) E(OFF) 4 0.25 1 1 E(ON) IC = 32A IC = 16A 2 E(OFF) 0.00 0 0 20 40 60 80 0 0 0 10 20 30 40 50 60 IC - Amperes RG - Ohms Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 16 IC = 32A VCE = 300V 100 64 12 IC - Amperes VGE - Volts 10 TJ = 125C RG = 4.7 dV/dt < 5V/ns 8 1 4 0 0 25 50 75 100 125 0.1 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 D=0.5 D=0.2 ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
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