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High Voltage IGBT with Diode
Combi Pack Short Circuit SOA Capability
IXSK35N120AU1 VCES
IC25 VCE(sat)
= 1200 V = 70 A = 4V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 720 V, TJ = 125C RG = 22 W, non repetitive TC = 25C IGBT Diode
Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W W C C C C Nm/lb.in. g
TO-264 AA
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features * International standard package JEDEC TO-264 AA * High frequency IGBT and anti-parallel FRED in one package * 2nd generation HDMOSTM process * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
1.6 mm (0.063 in) from case for 10 s Mounting torque
300 1.15/13 10
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 8 750 15 100 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA, VGE = 0 V = 4 mA, VCE = VGE
* * * * *
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * Space savings (two devices in one package) * Easy to mount with one screw (isolated mounting screw hole) * High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
94526F(7/00)
(c) 2000 IXYS All rights reserved
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IXSK35N120AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 26 S TO-264 AA Outline
gfs
IC
= IC90; VCE = 10 V,
Pulse test, t 300 ms, duty cycle 2 % IC(on) C ies Coes C res Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz VGE = 15 V, VCE = 10 V 170 3900 295 60 150 40 70 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Note 1 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Note 1 80 150 400 500 10 80 150 8 400 700 15 900 700 190 60 100 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
td(on)
t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.35 32 225 40 36 60 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 %, TJ = 125C IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C
0.65 K/W
IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data sheet, Publication No. D96001DE, pages 66 - 67.
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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