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| SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D KMB6D0DN30QA Dual N-Ch Trench MOSFET H T P G L FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current 25 Drain Power Dissipation 100 Maximum Junction Temperature Storage Temperature Range Unless otherwise noted) SYMBOL VDSS VGSS ID * (note1) PATING 30 20 6 20 1.3 2 UNIT V V A A A W W FLP-8 IDP IS PD * 1.6 Tj Tstg RthJA* -50~150 -50~150 78 Thermal Resistance, Junction to Ambient * : Surface Mounted on FR4 Board, t 10sec. /W PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 8 7 6 5 2 7 2 3 3 6 4 5 4 2007. 4. 3 Revision No : 0 1/5 KMB6D0DN30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic (Note 3) Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% * Upper electrical characteristics can be changed because these are tentative specifications. * Graphs are omitted because these are tentative specifications. VSDF IDR=1.7A, VGS=0V 0.75 1.2 V Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tr VDD=15V, VGS=10V ID=1A, RG=6 (Note 1) VDS=10V, VGS=5V, ID=6A VDS=15V, f=1MHz, VGS=OV 740 170 75 7 3.8 2.5 8 13 18 8 10 16 24 ns 29 6 nC pF BVDSS IDSS IGSS Vth RDS(ON) VGS=4.5V, ID=4.9A ID(ON) Gfs VDS=5V, VGS=10A VDS=10V, ID=6A 20 35 20 42 A S ID=250 A, VGS=0V VDS=24V, VGS=0V VGS= 25V, VDS=0V 30 1 2 24 1 100 3 28 m V A A V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10.0V, ID=6A 2007. 4. 3 Revision No : 0 2/5 KMB6D0DN30QA Fig1. ID - VDS Drain Source On Resistance RDS(ON) () 20 VGS=10 VGS=4.5 Common Source Tc= 25 C Pulse Test Fig2. RDS(on) - ID 0.16 Common Source Pulse Test 0.14 Tc= 25 C 0.12 0.1 0.08 0.06 0.04 0.02 0 0 Drain Current ID (A) 16 VGS=5 12 VGS=4.0 8 4 0 0 2 4 6 8 10 VGS=3.5 VGS=3.0 VGS=4.5 VGS=10.0 5 10 15 20 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS 20 Common Source VDS=5V Pulse Test Fig4. RDS(on) - Tj 50 Common Source VDS=10V Pulse Test Normalized Drain Source On Resistance RDS(ON) (m) 5 Drain Current ID (A) 15 40 30 20 10 0 10 125 C 25 C -55 C 5 0 1 2 3 4 -80 -40 0 40 80 120 160 Gate - Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) Reverse Drain Current IDR (A) 5 Common Source VGS=VDS ID=250A 4 Pulse Test Fig6. IDR - VSDF 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Common Source Tc= 25 C Pulse Test 3 2 1 0 -80 -40 0 40 80 120 160 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 4. 3 Revision No : 0 3/5 KMB6D0DN30QA Fig7. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 1 0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM t1 t2 RJA(t) = r(t) RJA RJA= 135 C/W TJ-TA=P RJA(t) Duty Cycle D = t1/t2 10-2 Single Pluse 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) Fig8. Safe Operation Area 102 Operation in this area is limited by RDS(ON) 100s 1ms 10ms 100ms Drain Current ID (A) 101 100 1s DC 10s 10-1 VGS= 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 10-2 -1 10 100 101 102 Drain - Source Voltage VDS (V) 2007. 4. 3 Revision No : 0 4/5 KMB6D0DN30QA Fig. 9 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig. 10 Resistive Load Switching RL VDS 90% 0.5 VDSS 6 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 4. 3 Revision No : 0 5/5 |
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