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| DSEP 8-06B HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 30 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 125C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 0.9 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C mounting torque typical 60 0.4...0.6 2 Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.66 2.66 2.5 0.5 A mA V V K/W K/W ns 2.4 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/s TVJ = 100C 30 Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified: IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 418 DSEP 8-06B 30 A 25 IF TVJ = 150C 20 15 10 5 0 0 1 2 VF TVJ = 25C 3 V 50 2 TVJ = 100C 100 250 nC 200 Qr 150 TVJ = 100C VR = 300 V IRM IF = 5 A IF = 10 A IF = 20 A 4 TVJ = 100C VR = 300 V 6 10 A 8 IF = 5 A IF = 10 A IF = 20 A 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt ns 100 TVJ = 100C VR = 300 V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V VFR TVJ = 100C IF = 10 A 0.3 s tfr 0.2 2.0 1.5 Kf trr 80 IF = 5 A IF = 10 A IRM 60 IF = 20 A 40 1.0 20 VFR 0.5 Qr 0.0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/s 1000 40 0 0 tfr 0.1 200 400 0.0 600 A/s 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169 0.01 0.001 0.00001 DSEP 8-06B NOTE: Fig. 2 to Fig. 6 shows typical values 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 418 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-2 |
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