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| MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19 15 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 4 14, 20 7 8 MWI 11 12 3 4 14, 20 11 12 MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25C TC = 80C VGE = 15 V; RG = 12 ; TVJ = 125C RBSOA; clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 12 ; TVJ = 125C SCSOA; non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 165 115 200 VCES 10 640 V V A A A s W Features * NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits * HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current * Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 1.4 400 330 15 750 45 12 10 7.4 0.76 2.5 6.5 1.4 V V V mA mA nA ns ns ns ns mJ mJ nF C 0.19 K/W 448 VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 100 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C * MWI - AC drives - power supplies with power factor correction * MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 100 A VGE = 15 V; RG = 12 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 150 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 MWI 100-12 E8 MKI 100-12 E8 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 200 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 100 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 120 A; diF/dt = -750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.7 58 190 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 14 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 7 m Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.389 J/K; Rth1 = 0.139 K/W Cth2 = 2.154 J/K; Rth2 = 0.051 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W Characteristic Values min. typ. max. 1.8 m mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") pins 5, 6, 7, 8 and 17 for MWI only IXYS reserves the right to change limits, test conditions and dimensions. 448 (c) 2004 IXYS All rights reserved 2-4 MWI 100-12 E8 MKI 100-12 E8 300 A VGE = 17 V TVJ = 25C 13 V 15 V 11 V 250 IC 300 A 250 IC 200 150 100 TVJ = 125C VGE = 17 V 15 V 13 V 200 150 100 50 0 0 1 2 3 VCE 9V 11 V 9V 50 0 4 V 5 0 1 2 3 VCE 4 V 5 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 300 A VCE = 20 V 250 IC IF 300 A 250 200 150 100 TVJ = 125C TVJ = 125C 200 150 100 50 TVJ = 25C 50 0 TVJ = 25C 0 5 6 7 8 VGE 9 V 10 0 1 2 VF 3 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 90 20 V VCE = 600 V IC = 150 A 300 ns A IRM 250 200 trr 15 VGE 60 trr 10 30 5 IRM TVJ = 125C VR = 600 V IF = 120 A 150 100 50 0 0 200 400 600 800 nC 1000 QG 0 0 200 400 600 -di/dt MWI100-12E8 0 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 3-4 448 MWI 100-12 E8 MKI 100-12 E8 40 mJ Eon td(on) 400 ns 300 VCE = 600 V VGE = 15 V 20 mJ 1000 ns td(off) 30 16 t Eoff 800 t 600 400 200 12 200 20 RG = 12 TVJ = 125C VCE = 600 V VGE = 15 V RG = 12 TVJ = 125C 8 100 10 Eon tr 4 0 0 Eoff tf 0 0 50 100 IC 0 150 A 200 50 100 150 IC A 0 200 Fig. 7 Typ. turn on energy and switching times versus collector current 16 mJ Eon 12 td(on) Fig. 8 Typ. turn off energy and switching times versus collector current 16 mJ t Eoff 12 Eoff 400 ns 300 td(off) 1000 ns 750 t 8 Eon 4 VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C tr 200 8 VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C tf 500 100 4 250 0 0 5 10 RG 15 0 0 0 5 10 RG 20 15 20 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 250 A 1 K/W 0.1 ZthJC 0.01 Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 200 ICM 150 100 50 0 0 200 400 600 800 1000 1200 1400 V VCE RG = 12 TVJ = 125C 0.001 single pulse 0.0001 0.0001 MWI100-12E8 0.001 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 4-4 448 |
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