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Infrared Light Emitting Diodes
LN189M
GaAlAs Infrared Light Emitting Diode
Unit: mm
Light source for distance measuring systems s Features
* High-power output, high-efficiency: PO = 5.5 mW (typ.) * Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) * Infrared light emission close to monochromatic light: P = 880 nm (typ.) * Narrow directivity using spherical lenses; works well with optical systems in auto focus systems
6.00.3
1 0.40.1 Mark (Black) 0.3
,, ,
0.6 4.00.15 1.0
2
0.60.1
3.00.2
0.2
3.40.2
6.00.3
Spherical lens 0.40.03 0.60.1 0.50.1
0.15
0.75
2.00.2
Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
PD IF IFP VR Topr Tstg
160 90 175 3 -25 to +85 -40 to +100
mW mA mA V C C
1.5
Parameter
Symbol
Ratings
Unit
0.1 max.
0.35
s Absolute Maximum Ratings Ta = 25C
1.50.2
3.20.15
1.0 2.20.15
1: Anode 2: Cathode
Note) *: f = 10 kHz, Duty cycle = 25%
s Electro-optical Characteristics Ta = 25C
Parameter Radiant power Peak emission wavelength Spectral band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Precautions for Use [Airtightness] This product is not structured to provide a complete air seal. Therefore it cannxot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore this product cannot be put through automated soldering operations in which the ambient temperature exceeds the specified temperature. The recommended soldering conditions are as follows. * Temperature of soldering iron tip: 260C or less : 300C or less or * Soldering time : 5 seconds or less : 1 second or less * Soldering position : At least 2 mm away from lead base Symbol PO P VF IR tr tf IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VR = 3 V IFP = 100 mA IFP = 100 mA The angle in which radiant intencity is 50% 20 20 20 Conditions min 3 880 50 1.55 1.9 10 typ max Unit mW nm nm V A ns ns
]
[Ability to withstand chemicals] If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol. If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or a change in the condition of the case material.
3.00.15
, ,, , ,
1
LN189M
IF T a
120 160 140 100
Infrared Light Emitting Diodes
IF V F
1 Ta = 25C
IFP VF
tW = 10 s f = 100 Hz Ta = 25C
Forward current IF (mA)
80
Forward current IF (mA)
120 100 80 60 40 20
Pulse forward current IFP (A)
60
10-1
40
20
0 -25
0
20
40
60
80
100
0
0
0.5
1.0
1.5
2.0
10-2
0
1
2
3
4
5
Ambient temperature Ta (C)
Forward voltage VF (V)
Forward voltage VF (V)
PO IF
103 (1) tW = 10 s Duty = 0.1% (2) tW = 50 s Duty = 50% (3) DC Ta = 25C (1) 10 (2) (3) 1.8
VF Ta
10
PO Ta
IF = 90 mA
Relative radiant power PO
Forward voltage VF (V)
102
IF = 80 mA 1.4
Relative radiant power PO
120
1.6
1
10 mA 1.2
1
1 mA 1.0
10-1
10-2 -3 10
10-2
10-1
1
10
0.8 -40
0
40
80
10-1 -40
0
40
80
Forward current IF (A)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
P Ta
1 000 IF = 50 mA 100
Spectral characteristics
IF = 20 mA
Directivity characteristics
0 10 100
20
Peak emission wavelength P (nm)
900
Relative radiant intensity (%)
Relative radiant intensity (%)
80
90 80
30
60
70 60 50
800
40 50 60 70 80 90
40
40 30
700
20
20
600 -40
0
40
80
120
0 780
820
860
900
940
980
1 020
Ambient temperature Ta (C)
Wavelength (nm)
2

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