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| N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 123 1.Gate 2.Drain 3.Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage - Continue - Non-repetitive Total Power Dissipation TO-251/252 TO-220 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Tj = 25J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25[) Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8'' form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 60 60 -55 to 150 20 1.0 62.5 260 2.0 9.0 +/-20 +/-40 UNIT A V V W TJ, TSTG EAS c c J mJ J /W J JC JA TL STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET 2.0A M02N60B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage CurrentForward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductance SYMBO MIN L V(BR)DSS 600 IDSS IGSSF VGS(th) RDS(on) Ciss Coss Crss td(on) Td(off) tr tf Qg Qgd Qgs LD Ls 435 56 9.2 12 30 21 24 13 6.0 2.0 4.5 7.5 22 2.0 TYP MAX UNIT Vdc 0.1 1.0 100 4.0 4.4 mA mA nA V Ohm pF pF pF nS nS nS nS nC nC nC nH nH Ta=25J^ CONDITION VGS=0, ID=250uA VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125J VGSF=20V, VDS=0 VDS=VGS, ID=250uA VGS=10V, ID=1.2A* VDS=25V, VGS=0, f=1 MHz VDD=300V, ID=2.0A, VGS=10V, RG=18[ VDS=400V, ID=2.0A VGS=10V* Measured from the drain lead 0.25'' From package to center of die Measured from the sorce lead 0.25'' form package to source bond pad SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Tum Time Reverse Recovery Time VDS ton trr 2% 1.5 ** 340 V nS nS Is=2.0A, VGS=0V dIS/dt = 100A/g S *Pulse Test: Pulse Width O 300g S, Duty Cycle O **Negligible, Dominated by circuit inductance STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 N Channel MOSFET 2.0A TYPICAL CHARACTERISTICS M02N60B Page 3 N Channel MOSFET 2.0A TYPICAL CHARACTERISTICS (CONTINUED) M02N60B Page 4 N Channel MOSFET 2.0A M02N60B TO-220-3L PACKAGE OUTLINE DIMENSIONS SAMBOL A A1 B b b1 c c1 D E E1 e e1 F L L1 X DIMENSIONS IN MILLIMETERS MIN MAX 4.470 4.670 2.520 2.820 0.710 0.910 1.170 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.01 10.31 8.500 8.900 12.06 12.46 2.540 TYP 4.980 5.180 2.590 2.890 13.40 13.80 3.560 3.960 3.790 3.890 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA (6 0) 9389294 A (6 0) 938929 Page 5 |
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