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| MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTLINE DRAWING 300.2 26.60.2 21.20.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.50.1 1 5 1 2 3 4 4 5 0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=806-870MHz, ZG=ZL=50 f=806-870MHz, ZG=ZL=50 f=806-870MHz, ZG=ZL=50 Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3 30 Max 870 Unit MHz W % dBc VDD=7.2V, VGG=3.5V, Pin=50mW -28 4 No parasitic oscillation No degradation or destroy ZG=ZL=50, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1 Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 7 6 5 4 3 2 in PO T 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 T 20 VDD=7.2V VGG=3.5V 1 Pin=50mW 10 ZG=ZL=50 0 0 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 T 5 10.0 PO 3 1.0 f=870MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 2 1 10.0 4 100.0 6 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 50 T 40 30 PO 20 10 f=806MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 6 50 5 4 PO 3 2 1 0 1.0 20 T 40 30 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 8 6 T 70 60 50 40 30 PO f=806MHz VGG=3.5V Pin=50mW ZG=ZL=50 20 10 10 f=870MHz VDD=7.2V 0 Pin=50mW ZG=ZL=50 1.5 2.0 2.5 3.0 3.5 4.0 4 2 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V) GATE SUPPLY VOLTAGE VGG (V) Nov. 97 MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 12 10 T 8 6 4 PO 2 f=870MHz VGG=3.5V Pin=50mW ZG=ZL=50 40 30 20 10 70 60 50 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 |
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