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| Schottky Barrier Diodes (SBD) MA3X704, MA3X704A Silicon epitaxial planar type For switching circuits For wave detection circuit 2.9 - 0.05 2.8 - 0.3 0.65 0.15 1.5 + 0.2 Unit : mm 0.65 0.15 + 0.25 - 0.05 0.95 0.95 I Features * Low forward rise voltage (VF) and satisfactory wave detection efficiency () * Small temperature coefficient of forward characteristic * Extremely low reverse current IR 1.9 0.2 + 0.2 1 3 2 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage MA3X704 MA3X704A MA3X704 MA3X704A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125 -55 to +125 mA mA C C V Unit V 0.1 to 0.3 0.4 0.2 1.1 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Peak forward current Forward current (DC) Junction temperature Storage temperature Marking Symbol * MA3X704 : M1K * MA3X704A : M1L Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) MA3X704 MA3X704A Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr Symbol IR VR = 15 V VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1 Conditions Min Typ Max 200 300 0.4 1 V V pF ns Unit nA Detection efficiency 65 0.16 - 0.06 + 0.2 - 0.1 + 0.1 0.4 - 0.05 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3X704, MA3X704A Common characteristics charts IF V F 103 1.0 0.9 Schottky Barrier Diodes (SBD) VF Ta 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 Forward voltage VF (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 mA IF = 30 mA 10 mA 10 1 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 0 40 80 120 160 Forward voltage VF (V) Ambient temperature Ta (C) Characteristics charts of MA3X704 IR VR 103 Ct VR 3 f = 1 MHz Ta = 25C 102 IR Ta VR = 15 V 7.5 V Terminal capacitance Ct (pF) 102 IR (A) Reverse current IR (A) 0 5 10 15 20 25 30 Ta = 125C 10 75C 1 10 2 Reverse current 1 1 10-1 25C 10-1 10-2 0 5 10 15 20 25 30 0 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (C) Characteristics charts of MA3X704A IR VR 103 Ct VR 3 f = 1 MHz Ta = 25C 102 IR T a VR = 30 V 15 V Reverse current IR (A) Reverse current IR (A) Ta = 125C Terminal capacitance Ct (pF) 102 10 2 10 75C 1 1 25C 10-1 1 10-1 10-2 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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