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| Schottky Barrier Diodes (SBD) MA3X791 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features * Two MA3X786s are contained in one package (series connection) * Allowing to rectify under (IF(AV) = 100 mA) condition * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Low VF (forward rise voltage), with high rectification efficiency 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 + 0.2 Unit : mm 0.65 0.15 1.5 - 0.05 + 0.25 0.95 1.9 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 - 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Series*2 Single Series*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 -55 to +125 A mA Unit V V mA 0.1 to 0.3 0.4 0.2 Marking Symbol: M4A Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature C C 2 0.8 1 : Anode 1 2 : Cathode 2 JEDEC : TO-236 3 : Cathode 1 EIAJ : SC-59 Anode 2 Mini Type Package (3-pin) 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 20 2 Conditions Min Typ Max 15 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.2 + 0.1 0.4 - 0.05 + 0.1 1 MA3X791 IF V F 1 Schottky Barrier Diodes (SBD) VF Ta 0.8 0.7 10-2 IR VR 10-1 10-3 Ta = 125C Forward voltage VF (V) Forward current IF (A) Ta = 125C 10-2 75C 25C - 20C 0.5 0.4 0.3 0.2 10 mA 0.1 3 mA IF = 100 mA Reverse current IR (A) 0.6 10-4 75C 10-3 10-5 25C 10-6 10-4 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-7 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 10 000 Ct VR 30 1 000 IF(surge) tW Ta = 25C 1 000 Terminal capacitance Ct (pF) VR = 30 V 3V 1V 25 Forward surge current IF(surge) (A) 300 tW 100 30 10 3 1 0.3 0.1 0.03 IF(surge) Reverse current IR (A) 20 100 15 10 10 1 5 0.1 -40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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