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Variable Capacitance Diodes
MA4X348
Silicon planar type
Unit : mm
For AFC of FM tuner
0.65 0.15
2.8 - 0.3
+ 0.2
1.5 - 0.05
+ 0.25
0.65 0.15
0.5 R
+ 0.1
3
0.4 - 0.05
* Two elements contained independently, allowing high density mounting * Small reverse current IR
1.9 0.2
0.95
4
1
2.9 - 0.05
+ 0.2
0.95
0.5
2
0.2
I Absolute Maximum Ratings Ta = 25C
1.1 - 0.1
+ 0.2
Parameter Reverse voltage (DC) Peak reverse voltage Junction temperature Storage temperature
Symbol VR VRM Tj Tstg
Rating 15 15 150 -55 to +150
Unit V V C C
0.4 0.2
1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1S Internal Connection
4 3 1 2
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Symbol IR1 IR2 Diode capacitance Q CD Q VR = 12 V VR = 12 V, Ta = 75C VR = 10 V, f = 1 MHz VR = 10 V, f = 50 MHz 10 40 Conditions Min Typ Max 100 1 16 Unit nA A pF
Note) Rated input/output frequency: 50 MHz
0 to 0.1
0.1 to 0.3
0.8
0.16 - 0.06
+ 0.1
0.6 - 0
+ 0.1
0.4 - 0.05 1.45
I Features
+ 0.1
1
MA4X348
IF V F
103
10
Variable Capacitance Diodes
IR V R
1.6 1.4
VF Ta
102
Forward current IF (mA)
Reverse current IR (mA)
Forward voltage VF (V)
1
1.2 1.0 IF = 100 mA 0.8 0.6 0.4 0.2 10 mA 3 mA
10
100C
25C
Ta = 150C 1
- 20C
10-1
Ta = 150C
100C 10-2 25C
10-1
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10-3
0
5
10
15
20
25
30
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
102
40 35
CD VR
f = 1 MHz Ta = 25C
Q VR
104 f = 50 MHz Ta = 50C
Diode capacitance CD (pF)
Reverse current IR (nA)
10
30 25 20 15 10 5
103
1
10-1
Q
VR = 15 V
12 V 10 V
102
10
10-2 -40
0
0
40
80
120
160
200
0
5
10
15
20
25
30
1 0.3
1
3
10
30
100
300
Ambient temperature Ta (C)
Reverse voltage VR (V)
Reverse voltage VR (V)
2

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