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| 1.2-3.2 GHz 1.2W Power Amplifier Features 1.2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAGTM MESFET Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information Description The MAAPGM0036-DIE is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications 2.5-2.7 GHz MMDS GPS Radar Telemetry Electrical Characteristics: TB = 40C1, Z0 = 50 , VDD = 8V, IDQ 460mA2, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Output Third Order Intercept 3 Order Intermodulation Distortion Single Carrier Level = 21 dBm 5th Order Intermodulation Distortion Single Carrier Level = 21 dBm Noise Figure 2 Harmonic 3 Harmonic rd nd rd Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI IM3 IM5 NF 2f 3f Typical 1.2-3.2 31 30 30 20 1.4:1 1.8:1 <5 < 725 40 -10 -35 5 -12 -20 Units GHz dBm % dBm dB mA mA dBm dBm dBm dB dBc dBc 1. TB = MMIC Base Temperature 2. Adjust VGG between -2.4 and -1.5V to achieve indicated IDQ. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2-3.2 GHz 1.2W Power Amplifier Maximum Operating Conditions 3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Die Attach Temperature 3. Operation outside of these ranges may reduce product reliability. Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23.0 +12.0 -3.0 730 6.6 180 -55 to +150 310 MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information Units dBm V V mA W C C C Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ JC TB 14.2 Note 4 Min 4.0 -2.4 Type 8.0 -2.0 Max 10.0 -1.5 21.0 150 Unit V V dBm C C/W C 4. Maximum MMIC Base Temperature = 150C --JC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ. 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2-3.2 GHz 1.2W Power Amplifier 50 MAAPGM0036-DIE 50 POUT PAE RO-P-DS-3017 B Preliminary Information 40 40 30 30 20 20 10 10 0 1.0 1.5 2.0 2.5 3.0 3.5 0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 POUT PAE 40 40 50 POUT (dBm) 20 20 10 10 0 4 5 6 7 8 9 10 0 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 2.25 GHz. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. PAE (%) 30 30 1.2-3.2 GHz 1.2W Power Amplifier 50 VDD = 4 VDD = 8 40 MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information VDD = 6 VDD = 10 30 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 GAIN Input VSWR Output VSWR 6 25 5 Gain (dB) 20 4 15 3 10 2 5 1.0 1.5 2.0 2.5 3.0 3.5 1 Frequency (GHz) 4 Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. VSWR 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information Mechanical Information Chip Size: 2.986 x 2.982 x 0.075 mm 0.133mm. 0.629mm. (118 2.627mm. x 117 x 3 mils) 2.986mm. 2.982mm. 2.830mm. VGG VDD OUT 2.830mm. 1.492mm. 1.492mm. IN VGG VDD 0.154mm. 0 0.152mm. 2.859mm. 0.629mm. 2.627mm. 0 Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 5. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 6x6 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036-DIE RO-P-DS-3017 B Preliminary Information 100 pF 100 pF 0.1 F VDD VGG VDD RFIN OUT IN VGG VDD RFOUT VGG 0.1 F 100 pF 100 pF Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testAssembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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