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| MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 21.0 +/-0.3 2 N I. 0 M 2 / + 9 . 2 1 N I M 2 OUTLINE DRAWING Unit : millimeters FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ.) @Po=25dBm S.C.L. (1) 0.6 +/-0.15 (2) (2) R-1.6 3 . 1 1 (3) 10.7 2 . 0 / + 1 . 0 6 . 2 APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital ratio communication 4 . 0 / + 5 . 4 17.0 +/-0.2 6 . 1 2 . 0 QUALITY GRADE IG 12.0 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 1.2 (A) RG=100 (ohm) GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 (Ta=25deg.C) Ratings -15 -15 3.75 -10 21 25 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 Rth(ch-c) (Ta=25deg.C) Test conditions Min. VDS = 3V , VGS = 0V VDS = 3V , ID = 1.1A VDS = 3V , ID = 10mA 35 VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz 11 Limits Typ. 1 36 12 1.1 32 -45 5 Unit Max. 3.75 -4.5 1.8 6 A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 delta Vf method -42 - *1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz *2 : Channel-case MITSUBISHI ELECTRIC 18-Sep-'98 MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f OUTPUT POWER Po(dBm) Po,PAE vs. Pin OUTPUT POWER P1dB (dBm) 38 VDS=10(V) IDS=1.2(A) P1dB 17 16 15 LINEAR POWER GAIN GLP(dB) 40 38 36 34 32 30 28 26 24 22 20 10 15 20 25 30 35 PAE VDS=10(V) IDS=1.2(A) f=3.5(GHz) Po 100 90 80 70 POWER ADDED EFFICIECY PAE(%) 37 36 35 GLP 60 50 40 30 20 10 0 14 13 12 11 3.3 3.4 3.5 FREQUENCY f(GHz) 34 33 32 3.6 3.7 INPUT POWER Pin (dBm) Po,IM3 vs Pin OUTPUT POWER Po (dBm S.C.L) 33 31 29 27 VDS=10(V) IDS=1.2(A) f=3.6GHz Delta f=5(MHz) Po 10 0 -10 -20 PAE 25 23 21 19 7 9 11 13 15 17 19 21 -30 -40 -50 -60 INPUT POWER Pin(dBm S.C.L.) S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) ) S-Parameters (TYP.) f (GHz) 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 Magn. 0.48 0.49 0.49 0.49 0.48 0.46 0.43 0.38 0.36 S11 Angle(deg) -179 166 159 145 133 126 112 98 88 Magn. 4.148 4.146 4.127 4.111 4.119 4.123 4.079 4.072 4.049 S21 Angle(deg) 29 16 9 -4 -17 -24 -37 -51 -59 Magn. 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 S12 Angle(deg) -38 -52 -58 -70 -79 -85 -97 -113 -118 Magn. 0.28 0.29 0.29 0.30 0.31 0.32 0.33 0.33 0.33 S22 Angle(deg) -136 -150 -157 -170 178 171 158 145 140 IM3(dBc) MITSUBISHI ELECTRIC 18-Sep-'98 |
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