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| MITSUBISHI SEMICONDUCTOR MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET '(6&5,37,21 OUTLINE r r The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. )($785(6 H H A Push-pull configuration A High output power Pout = 60W (TYP.) @ f=2.17 GHz A High power gain GLP = 12 dB (TYP.) @ f=2.17GHz A High power added efficiency $33/,&$7,21 r r r P.A.E. = 48 % (TYP.) @ f=2.17GHz r r ICVG UQWTEG FTCKP 48$/,7<*5$'( IG 5(&200(1'('%,$6&21',7,216 VDS = 12 (V) ID = 2.0 (A) RG=20 (ohm) for each gate $%62/87(0$;,0805$7,1*6 WPKVOO (Ta=25deg.C) Unit V V W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. Symbol VGDO VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature Ratings -20 -10 125 175 -65 / +175 *1 : Tc=25deg.C (/(&75,&$/&+$5$&7(5,67,&6 (Ta=25deg.C) Symbol GLP Pout ID(RF) P.A.E. Rth (ch-c) Parameter Linear power gain Output power Drain current Power added efficiency Thermal resistance Test conditions Min. Pin=22dBm VDS=12V, ID(RF off)=2.0A Pin=39dBm f=2.17GHz 11 47 Channel to Case - Limits Typ. Max. 12 48 11 48 1 15 1.2 r 2.11-2.17GHz band power amplifier for W-CDMA Base Station Unit dB dBm A % deg.C/W MITSUBISHI ELECTRIC June-'04 MITSUBISHI SEMICONDUCTOR MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET MITSUBISHI ELECTRIC June-'04 |
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