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| Infrared Emitting Diodes(GaAlAs) K DNH OESI ML-1CL3 DIMENSIONS The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3(c)TMceramic package. (Unit : mm) FEATURES U(c)TM3 ceramic base UPeak emission wavelength *I nm p=865 UWide beam angle aeeg. 53d APPLICATIONS UOptical switches U ncoders E U A O MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 3 50 80 0.5 0 70 2 0 80 2 240 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth *3 Radiant intensity Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 50mA VR=3V F= I 20mA F= I 20mA F= I 20mA Min. Typ. 1.4 865 30 ae 3 5 Max. 1.7 10 Unit. V *I A nm nm mV deg. 50 *3. Measured by tester of KODENSHI CORP. - 1- Infrared Emitting Diodes(GaAlAs) ML-1CL3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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