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MMBD1401A / 1403A / 1404A / 1405A
MMBD1401A / 1403A / 1404A / 1405A
Connection Diagram
1401A 3 3 3 3 1403A
A29
2 1 1 2
MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34
1 1404A 3
2NC
1 3
2 1405A
SOT-23
1
2
1
2
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings *
Symbol WIV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current
TA = 25C unless otherwise noted
Parameter
Value 175 200 600 700 1.0 2.0 -55 to +150 150
Units V mA mA mA A A C C
Recurrent Peak Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
TSTG TJ
* These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol PD RJA Power Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Parameter Max. MMBD1401A - 1405A* 350 2.8 357 Units mW mW/C C/W
* Device mounted on glass epoxy PCB 1.6" x 1.6" x 0.06"; mounting pad for the collector lead min. 0.93 in 2
(c)2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Electrical Characteristics
Symbol BV IR VF
TA=25C unless otherwise noted
Parameter Breakdown Voltage Reverse Leakage Forward Voltage MMBD1401A/1403A MMBD1404A/1405A MMBD1401A/1403A MMBD1404A/1405A
Test Conditions IR = 100A VR = 120V VR = 175V IF = 10mA IF = 50mA IF = 200mA IF = 200mA IF = 300mA IF = 300mA VR = 0, f = 1.0MHz IF = IR = 30mA IRR = 1.0mA, RL = 100
Min. 250
Max. 40 100
Units V nA nA mV mV V V V V pF nS
760
800 920 1.1 1.0 1.25 1.1 2.0 50
CO TRR
Diode Capacitance Reverse Recovery Time
Typical Characteristics
V VRR - REVERSE VOLTAGE (V)
325
IR - REVERSE CURRENT (nA)
Ta= 25C
50 40 30 20 10 0 55
Ta= 25C
300
275
3
5
10 20 30 50 I R - REVERSE CURRENT (uA)
100
75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100A
Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205V
VF - FORWARD VOLTAGE (mV) F V
IIR - REVERSE CURRENT (nA) R
100 90 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 255
Ta= 25C
450 400 350 300 250 1
Ta= 25C
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature
2
3 5 10 20 30 50 IF - FORWARD CURRENT (uA)
100
Figure 3. Reverse Current vs Reverse Voltage IR - 180 to 255V
Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100A
(c)2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Typical Characteristics
(Continued)
VF - 0.1 to 10 mA
V F V F - FORWARD VOLTAGE (mV)
V VFF - FORWARD VOLTAGE (mV)
725 Ta= 25C 700 650 600 550 500 450 0.1
1.4 1.3 1.2 1.1 1 0.9 0.8
Ta= 25C
0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA)
10
0.7 10
20
30 50 100 200 300 IF - FORWARD CURRENT (mA)
500
800
Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA
Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA
V VFF - FORWARD VOLTAGE (mV)
1.3 CAPACITANCE (pF)
Ta= 25C
800
Ta= -40C
1.2 1.1 1 0.9 0.8
600
Ta= 25C
400
Ta= +80C
200 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10
0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15
Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0A - 10mA (- 40 to +80C)
Figure 8. Capacitance vs Reverse Voltage VR - 0 to 5V
REVERSE RECOVERY (nS)
50
500 I - CURRENT (mA) 400 300 200 100 0
3
IR
-F OR WA RD
40
CU RR EN TS
30
IF = IR = 30 mA Rloop = 100 Ohms
Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA
TE AD
20
1
1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA)
0
50 100 150 o TA - AMBIENT TEMPERATURE ( C)
Figure 9. Reverse Recovery Time vs Reverse Recovery Current (Irr)
Figure 10. Average Rectified Current(IO) & Forward Current (IF) vs Ambient Temperature(TA)
(c)2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
MMBD1401A / 1403A / 1404A / 1405A
Typical Characteristics
(Continued)
500 PD - POWER DISSIPATION (mW)
400
DO-35 Pkg
300 SOT-23 Pkg
200
100
0
0
50 100 150 IO - AVERAGE TEMPERATURE ( oC)
200
Figure 11. Power Derating Curve
(c)2004 Fairchild Semiconductor Corporation
MMBD1401A / 1403A / 1404A / 1405A, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
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StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I13

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