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| SPICE MODEL: MMBT2907A MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) B E SOT-23 A C B TOP VIEW Dim A C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 * B C D E Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 4): K2F Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) E D G H K J L M G H J K C L M * B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Pd RJA Tj, TSTG Value -60 -60 -5.0 -600 -800 300 417 -55 to +150 Unit V V V mA mA mW C/W C Characteristic Collector Current - Continuous (Note 1) Peak Collector Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30040 Rev. 11 - 2 1 of 4 www.diodes.com MMBT2907A (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.0 75 100 100 100 50 -- 200 Max -10 -50 -50 300 -0.4 -1.6 -1.3 -2.6 8.0 30 45 10 40 100 80 30 Unit V V V nA A nA nA Test Condition IC = -10A, IE = 0 IC = -10mA, IB = 0 B IE = -10A, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100A, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA B B DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) Cobo Cibo fT toff td tr toff ts tf V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA B B pF pF MHz ns ns ns ns ns ns VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 3. Short duration pulse test used to minimize self-heating effect. 400 Note 1 350 PD, POWER DISSIPATION (mW) f = 1MHz 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics CAPACITANCE (pF) Cibo Cobo TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30040 Rev. 11 - 2 2 of 4 www.diodes.com MMBT2907A (c) Diodes Incorporated -0.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = -1mA IC = -10mA IC = -300mA IC = -100mA -0.5 IC = 10 IB IC = -30mA -0.4 -0.3 TA = 150C -0.2 TA = 25C -0.1 TA = -50C -0.01 -0.1 -1 -10 IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region 0 -100 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current 1000 -1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V TA = 150C VCE = -5V -0.9 -0.8 -0.7 -0.6 TA = 25C -0.5 -0.4 -0.3 -0.2 TA = 150C TA = -50C hFE, DC CURRENT GAIN 100 TA = 25C TA = -50C 10 1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = -5V -0.1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current 100 10 1 -1 -10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current -100 DS30040 Rev. 11 - 2 3 of 4 www.diodes.com MMBT2907A (c) Diodes Incorporated Ordering Information (Note 4) Device MMBT2907A-7-F Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2F Date Code Key Year 1998 Code J Month Code YM K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30040 Rev. 11 - 2 4 of 4 www.diodes.com MMBT2907A (c) Diodes Incorporated |
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