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MPS6562 Discrete POWER & Signal Technologies MPS6562 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 25 5.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6562 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MPS6562 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, I E = 0 IE = 100 A, IC = 0 VCB = 20 V, IE = 0 VCE = 25 V, IE = 0 VEB = 4.0 V, IC = 0 25 25 5.0 100 100 100 V V V nA nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA VCE = 1.0 V, IC = 500 mA IC = 500 mA, I B = 50 mA VCE = 1.0 V, IC = 500 mA 35 50 50 200 0.5 1.2 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage V V SMALL SIGNAL CHARACTERISTICS Cob fT Output Capacitance Current Gain - Bandwidth product VCB = 10 V, f = 100 kHz IC = 10 mA, VCE = 10 V, f = 20 MHz 60 30 pF MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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