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| Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. * Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain -- 13.2 dB Drain Efficiency -- 46.2% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P24190HR6 2450 MHz, 190 W, 28 V CW LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 250 1.3 Unit Vdc Vdc C C C W W/C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100C, 160 W CW Case Temperature 83C, 40 W CW Symbol RJC Value (1,2) 0.22 0.24 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6P24190HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min -- -- -- Typ -- -- -- Max 10 1 1 Unit Adc Adc Adc Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc Crss -- 1.5 -- pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. Gps D IM3 ACPR IRL 13 22 -- -- -- 14 23.5 - 37.5 - 41 - 13 16 -- - 35 - 38 -- dB % dBc dBc dB MRF6P24190HR6 2 RF Device Data Freescale Semiconductor + R1 VBIAS + C12 + C11 C9 B2 Z4 RF INPUT Z1 Z2 Z3 Z5 C2 Z17 Z15 C4 R2 VBIAS + C16 + C15 C13 B4 C8 C22 C23 C24 C25 C26 C6 + C28 C14 B3 Z29 Z19 Z21 Z23 C1 DUT Z7 Z9 Z11 Z13 Z6 Z8 Z10 C5 Z14 Z12 C3 Z16 C10 B1 Z28 Z18 Z20 Z22 C7 C17 C18 C19 C20 C21 C27 VSUPPLY Z24 Z25 Z26 RF OUTPUT Z27 VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14 Z15 0.340 0.080 0.895 1.736 0.151 0.505 0.570 0.072 0.078 0.664 0.680 x 0.081 x 0.526 x 0.135 x 0.074 x 0.074 x 0.081 x 0.282 x 0.500 x 0.500 x 0.050 x 0.050 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z16, Z17 Z18, Z19 Z20, Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28, Z29 PCB 0.189 x 0.782 Microstrip 0.321 x 0.782 Microstrip 0.630 x 0.081 Microstrip 0.150 x 0.081 Microstrip 1.728 x 0.085 Microstrip 0.122 x 0.135 Microstrip 0.250 x 0.300 Microstrip 0.563 x 0.135 Microstrip 0.380 x 0.081 Microstrip 0.305 x 0.057 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.55 Figure 1. MRF6P24190HR6 Test Circuit Schematic -- 2450 MHz Table 5. MRF6P24190HR6 Test Circuit Component Designations and Values Part B1, B2, B3, B4 C1, C2, C3, C4 C5, C6, C7, C8 C9, C13 C10, C14, C17, C22 C11, C15 C12, C16 C18, C19, C20, C21, C23, C24, C25, C26 C27, C28 R1, R2 Ferrite Beads 5.1 pF, Chip Capacitors 5.6 pF, Chip Capacitors 0.01 F, 100 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 22 F, 25 V Tantalum Capacitors 47 F, 16 V Tantalum Capacitors 10 F, 50 V Chip Capacitors 330 F, 63 V Electrolytic Capacitors 240 , 1/4 W Chip Resistors Description Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay MRF6P24190HR6 RF Device Data Freescale Semiconductor 3 R1 C12 C11 + + C10* C9* C20 C21 C27 + + B1 B2 C5 C17 C18 C19 C7 C3 C1 CUT OUT AREA C2 C4 MRF6P24190H Rev. 1.0 C6 B3 B4 C8 C22 C23 C24 R2 C16 C15 C14* C13* + + C28 C25 C26 *Stacked Figure 2. MRF6P24190HR6 Test Circuit Component Layout -- 2450 MHz MRF6P24190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -- 2450 MHz 14.5 14 Gps, POWER GAIN (dB) 13.5 13 12.5 12 11.5 11 10.5 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 12 V 30 V 32 V 28 V 32 V 20 30 V 15 10 500 IDQ = 1900 mA f = 2450 MHz Gps 50 45 Gps, POWER GAIN (dB) 40 35 30 25 D, DRAIN EFFICIENCY (%) 14.5 14 13.5 13 12.5 12 11.5 11 10.5 10 VDD = 28 V f = 2450 MHz 100 Pout, OUTPUT POWER (WATTS) CW 300 1500 mA 1600 mA Gps 1900 mA 2200 mA 2100 mA Figure 3. Power Gain and Drain Efficiency versus CW Output Power 14.5 Gps 14 Gps, POWER GAIN (dB) 13.5 13 12.5 12 11.5 11 10.5 10 100 D Figure 4. Power Gain and Drain Efficiency versus CW Output Power 50 45 40 35 30 25 VDD = 28 V IDQ = 1900 mA f = 2450 MHz 20 15 10 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Drain Efficiency versus CW Output Power 108 107 MTTF (HOURS) 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 190 W CW, and D = 46.2%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product. Figure 6. MTTF versus Junction Temperature MRF6P24190HR6 RF Device Data Freescale Semiconductor 5 Zo = 25 Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W CW f MHz 2450 Zsource W 12.72 - j8.48 Zload W 2.75 - j4.85 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network + Device Under Test - Output Matching Network - Z source Z + load Figure 7. Series Equivalent Source and Load Impedance MRF6P24190HR6 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb M A A G4 L 1 2 TA M B M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) B D TA M B M ccc ccc M M TA (LID) M B M TA N (LID) M B M R H C F E PIN 5 M (INSULATOR) bbb M T SEATING PLANE (INSULATOR) S bbb M TA M B M TA M B M STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375D - 05 ISSUE E NI - 1230 MRF6P24190HR6 RF Device Data Freescale Semiconductor 7 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Dec. 2006 Mar. 2007 * Initial Release of Data Sheet * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a 200C+ hot wire operating condition, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 * Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3 - 5 * Added Fig. 6, MTTF versus Junction Temperature graph, p. 5 Description MRF6P24190HR6 8 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6P24190HR6 Document Number: RF Device Data MRF6P24190H Rev. 1, 3/2007 Freescale Semiconductor 9 |
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