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| CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date : .. Page No. : 1/4 MTN7000A3 Description The MTN7000A3 is a N-channel enhancement-mode MOSFET. Symbol MTN7000A3 Outline TO-92 GGate SSource DDrain SGD Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=1M) Gate-Source Voltage ---Continuous ---Non-repetitive(tp 50s) Continuous Drain Current (Ta=25C) Continuous Drain Current (Ta=100C) Pulsed Drain Current (Ta=25C) Total Power Dissipation (Ta=25C) Derate Above 25C Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Lead Temperature, for 10 second Soldering Note : *1. Pulse Width 300s, Duty cycle 2% Symbol VDSS VDGR VGS VGSM ID ID IDM Pd Tj Tstg Rth,ja TL Limits 60 60 20 40 200 130 500 400 3.2 -55~+150 -55~+150 312.5 260 Unit V V V V mA mA mA mW mW/C C C C/W C *1 MTN7000A3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) RDS(ON) GFS Ciss Coss Crss 100 Min. 60 0.8 Typ. Max. 3 10 -10 1 5.3 5 60 25 5 Unit V V nA nA A mA mS pF Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date : .. Page No. : 2/4 75 Test Conditions VGS=0, ID=10A VDS=VGS, ID=1.0mA VGS=+15V, VDS=0 VGS=-15V, VDS=0 VDS=48V, VGS=0 VDS=10V, VGS=4.5V ID=75mA, VGS=4.5V ID=75mA, VGS=10V VDS=10V, ID=200mA VDS=25V, VGS=0, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Characteristic Curves TYPICAL OUTPUT CHARACTERISICS 1.4 1.2 DRAIN CURRENT---ID(A) 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 DRAIN-SOURCE ---VDS(V) VGS=4V VGS=8V DRAIN CURRENT---ID(A) TYTICAL TRANSFER CHARACTERISTIC 1.4 1.2 VGS=5V 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 GAT E-SOURCE VOLT AGE---VGS(V) MTN7000A3 CYStek Product Specification CYStech Electronics Corp. ST AT IC DRAIN-SOURCE ON-ST AT E RESIST ANCE vs DRAIN CURRENT 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE--- RDS(on)(ohm) Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date : .. Page No. : 3/4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE VS GATE-SOURCE VOLTSAGE 10 STATIC DRAIN-SOURCE ON-STATE 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN CURRENT ---ID(A) VGS=10V VGS=5V 9 RESISTANCE--- RDS(on)(ohm) 8 7 6 5 4 3 2 1 0 0 5 10 15 20 GAT E-SOURCE VOLT AGE---VGS(V) ID=57.5m A ID=115mA FORWARD TRANSFER ADM ITTANCE vs DRAIN CURRENT 1000 FORWARD TRANSFER ADMITTANCE--GFS(ms) REVERSE DRAIN CURRENT vs SOURCEDRAIN VOLTAGE 1.00 VGS=10V 100 REVERSE DRAIN CURRENT---IDR(A) Pulsed 0.10 VGS=10V VGS=0V 10 1 0.001 0.01 0.1 1 0.01 0.00 0.50 1.00 1.50 DRAIN CURRENT ---ID(A) SWIT CHING 1000 POWER DISSIPATION--PD(W) SOURCE-DRAIN VOLT AGE---VSD(V) CHARACT ERIST ICS 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.1 1 0 Tf POWER DERATING CURVE SWITCHING TIMES---(ns) 100 T d(off) T d(on) 10 Tr 1 0.001 0.01 50 100 150 200 DRAIN CURRENT ---ID(A) AMBIENT TEMPERATURE---Ta() MTN7000A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension 2 Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date : .. Page No. : 4/4 A B 1 2 3 Marking: 2N7000 3 C D H I E F G Style: Pin 1.Source 2.Gate 3.Drain 3-Lead TO-92 Plastic Package CYStek Package Code: A3 1 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7000A3 CYStek Product Specification |
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