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MOTOROLA The RF Line
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MW4IC915/D
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. * Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power -- 3 Watts Avg. Power Gain -- 31 dB Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM -- 1.5% * Typical Performance: 860-960 MHz, 26 Volts Output Power -- 15 Watts CW Power Gain -- 30 dB Efficiency -- 44% * On Chip Matching (50 Ohm Input, >3 Ohm Output) * Integrated Temperature Compensation Capability with Enable/Disable Function * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA * Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW4IC915MBR1 MW4IC915GMBR1
GSM/GSM EDGE, N-CDMA, W-CDMA 860 - 960 MHz, 15 W, 26 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329-09 TO-272 WB-16 PLASTIC MW4IC915MBR1
CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MW4IC915GMBR1
PIN CONNECTIONS
VDS1 RFin RFout/VDS2 GND NC NC VDS1 NC RFin VGS1 VGS2 Temperature Compensation NC VGS1 VGS2 NC GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC
14
RFout / VDS2
Functional Block Diagram
13 12
NC GND
(Top View)
REV 2
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 15 W CW) GSM EDGE Application (Pout = 7.5 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Symbol RJC 1.48 Value 65 -0.5. +15 -65 to +175 175 Unit Vdc Vdc C C
THERMAL CHARACTERISTICS
Max Unit C/W
1.59
Freescale Semiconductor, Inc...
CDMA Application (Pout = 3.75 W CW)
1.63
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) Drain Efficiency (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) Third Order Intermodulation Distortion (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) Input Return Loss (VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz) Symbol Gps Min 29 Typ 31 Max -- Unit dB TWO-TONE FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
29
31
--
%
IMD3
--
-40
-29
dBc
IRL
--
-15
-10
dB
(continued)
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ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted)
Characteristic Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW (Characterize from 869-894 MHz and 920-960 MHz) Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW (Characterize from 869-894 MHz and 920-960 MHz) Delay @ Pout = 3 W CW Insertion Phase Window @ Pout = 3 W CW Symbol IQT GF Delay Min -- -- -- -- -- Typ 5 0.2 0.6 2.5 15 Max -- -- -- -- -- Unit % dB ns PERFORMANCE TESTS (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA
TYPICAL PERFORMANCE GSM/GSM EDGE (In Motorola Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power at 1dB Compression Point P1dB Gps IRL EVM SR1 SR2 -- -- -- -- -- -- -- 20 30 44 -15 1.5 -65 -83 -- -- -- -- -- -- -- Watts dB % dB % dBc dBc Common-Source Amplifier Power Gain (Pout = 15 W CW) Drain Efficiency (Pout = 15 W CW) Input Return Loss (Pout = 15 W CW) Error Vector Magnitude (Pout = 3 W Avg. including 0.6% rms source EVM) Spectral Regrowth at 400 kHz Offset (Pout = 3 W Avg.) Spectral Regrowth at 600 kHz Offset (Pout = 3 W Avg.)
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MOTOROLA RF DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 3
Freescale Semiconductor, Inc.
L1 VDS1 + RF INPUT C1 Z1 R1 + C6 VGS2 R2 + C9 C8 C7 C5 C4 C2 C3 1 2 NC 3 NC 4 5 NC 6 7 NC 8 9 10 NC 11 16 NC 15 + C10 C11 C15 + C14 VDS2
14
Z2
Z3
C12 C13
Z4
M1 Z5 M2 Z6
M4 Z7 M3
Z8
C16
Z9
RF OUTPUT
VGS1
Temperature Compensation NC 13 12
Freescale Semiconductor, Inc...
Z1 Z2 Z3 Z4 Z5
0.086, 50 W Microstrip 0.133 x 0.236 Microstrip 0.435 x 0.283 Microstrip 0.171 x 0.283 Microstrip 0.429 x 0.283 Microstrip
Z6 Z7 Z8 Z9 PCB
0.157 x 0.283 Microstrip 0.429 x 0.283 Microstrip 0.394 x 0.088 Microstrip 0.181 x 0.088 Microstrip Taconic TLX8, 0.030, r = 2.55
Figure 1. Two-Tone 860-960 MHz Test Fixture Schematic
Table 1. Two-Tone 860-960 MHz Test Fixture Component Designations and Values
Designators C1, C6, C9, C14 C2, C5, C8, C11 C3, C4, C7, C10, C16 C12, C13 C15 R1, R2 L1 M1, M2, M3, M4 Description 22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 22 pF Chip Capacitors, B Case, ATC #100B220JCA500X 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 10 k, 1/4 W Chip Resistor (1206) 12.5 nH Inductor 0.283, 90_ Mitered Microstrip Bends
MW4IC915MBR1 MW4IC915GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 4
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C1 VDS1 C2 C3 C10 L1 C12 C13 C5 C4 C7 C6 R1 C8 C9 VGS2 R2 C16 C11 MW4IC915MB Rev 0 VDS2 C14 C15
Freescale Semiconductor, Inc...
VGS1
Figure 2. Two-Tone 860-960 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 5
Freescale Semiconductor, Inc.
VDS + C4 R1 + RF INPUT C7 Z1 C10 C9
1 2 3 4 5 16
C5
C6
NC NC NC
NC
15
6
14
Z2
Z3
C15 C1
Z4
Z5
C2
Z6
C3
Z7
RF OUTPUT
7 8 9 10 11
NC
NC
Temperature Compensation
NC
13 12
R2
VGS + C8
Freescale Semiconductor, Inc...
R7 C11 C12 C16
P2
R4 R3 R5 C13 C14 C17 R6 P1
Z1 Z2 Z3 Z4
0.681 0.157 0.468 0.220
x 0.039, 50 W Microstrip x 0.228 Microstrip x 0.157 Microstrip x 0.157 Microstrip
Z5 Z6 Z7 PCB
0.566 x 0.043 Microstrip 0.165 x 0.043 Microstrip 0.078 x 0.043 Microstrip Taconic RF35, 0.02, r = 3.5
Figure 3. 860-960 MHz Reference Board Schematic
Table 2. 860-960 MHz Reference Board Component Designations and Values
Designators C1, C15 C2 C3, C4, C9, C11, C13 C5, C10, C12, C14 C6, C7, C8 C16, C17 P1, P2 R1, R2, R3, R4, R5 R6, R7 Description 10 pF Chip Capacitors (0805), ACCU-P AVX #08051J100GBT 5.6 pF Chip Capacitor (0805), ACCU-P AVX #08051J5R6BBT 33 pF Chip Capacitors (0805), ACCU-P AVX #08051J330GB 10 nF Chip Capacitors (0805), AVX #08055C103KAT 22 mF, 35 V Tantalum Capacitors, AVX #TAJE226M035R 100 nF Chip Capacitors (0805), AVX #08055C104KAT 5 k Potentiometer CMS Cermet Multi-turn, Bourns #3224W 0 , 1/8 W Chip Resistors (0805) 10 k, 1/4 W Chip Resistors (1206)
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VDD GROUND
R1 C7 C5 C4 C15 C6
C10 C9
C2
C3
Freescale Semiconductor, Inc...
C13 C11 C14 C12 R6 C17 P1 R5 R3 C16 R4 R2 R7 P2
C1
MW4IC915MB Rev 0 C8
VGG
GROUND
Figure 4. 860-960 MHz Reference Board Component Layout
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS (MOTOROLA TEST FIXTURE, 50 OHM SYSTEM)
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Gps IRL IMD3 IRL, INPUT RETURN LOSS (dB) IMD3, INTERMODULATION DISTORTION (dBc) 34 32 30 28 26 24 22 20 18 16 14 860 880 900 VDD = 26 Vdc Pout = 15 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 920 940 f, FREQUENCY (MHz) 0 -8 -16 -24 -32 -40 -48 -56 -64 -72 -80 960
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Figure 5. Two-Tone Wideband Circuit Performance
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD3, INTERMODULATION DISTORTION (dB) IMD, INTERMODULATION DISTORTION (dBc) 34 32 30 28 26 24 22 20 18 16 14 860 880 900 920 940 IMD3 IRL VDD = 26 Vdc Pout = 6 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 0 -7 -14 -21 -28 -35 -42 -49 -56 -63 -70 960 -20 -30 -40 -50 -60 -70 -80 1 VDD = 26 Vdc IDQ1 = 90 mA, IDQ2 = 240 mA f = 960 MHz 100 kHz Tone Spacing 10 100 Pout, OUTPUT POWER (WATTS) Avg. 5th Order 7th Order
Gps
3rd Order
-90 0.1
f, FREQUENCY (MHz)
Figure 6. Two-Tone Wideband Circuit Performance
Figure 7. Intermodulation Distortion Products versus Output Power
TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD)
34 TC = -30_C 25_C 56 48 , DRAIN EFFICIENCY (%) 40 85_C 32 24 85_C 16 8 1 10 0 100 G ps , POWER GAIN (dB) 35 34 33 32 31 30 29 28 860 870 880 890 85_C 25_C TC = -30_C VDD = 26 Vdc Pout = 3 W CW IDQ1 = 60 mA, IDQ2 = 240 mA
G ps , POWER GAIN (dB)
33 V = 26 Vdc DD IDQ1 = 60 mA, IDQ2 = 240 mA 32 f = 910 MHz 31 30 29 28 27 0.1 25_C
-30_C
900
910
920
930
940
950
960
Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 8. Power Gain and Efficiency versus Output Power
Figure 9. Power Gain versus Frequency
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TYPICAL CHARACTERISTICS (MOTOROLA REFERENCE BOARD) - CONTINUED
34 33 G ps , POWER GAIN (dB) 32 31 30 29 28 860 85_C 870 880 890 900 910 920 930 940 950 960 25_C TC = -30_C VDD = 26 Vdc Pout = P1dB IDQ1 = 60 mA, IDQ2 = 240 mA PAE, POWER ADDED EFFICIENCY (%) 21
20 TC = -30_C 25_C 85_C 18 VDD = 26 Vdc Pout = 3 W CW IDQ1 = 60 mA, IDQ2 = 240 mA 870 880 890 900 910 920 930 940 950 960 f, FREQUENCY (MHz)
19
17 860
f, FREQUENCY (MHz)
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Figure 10. Power Gain versus Frequency
Figure 11. Power Added Efficiency versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
4 3.5 3 2.5 2 1.5 1 0.5 0
SPECTRAL REGROWTH @ 400 kHz (dBc)
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz TC = 85_C
-50 25_C -30_C -55 -60 -65 -70 -75 -80
25_C TC = 85_C
-30_C
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz 0.1 1 10 100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS)
Figure 12. Error Vector Magnitude versus Output Power
Figure 13. Spectral Regrowth at 400 kHz versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
-70 -72 -74 -76 -78 -80 -82 -84 -86
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz TC = -30_C 85_C 25_C
0.1
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 14. Spectral Regrowth at 600 kHz versus Output Power
MOTOROLA RF DEVICE DATA
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Zo = 5 Zload* f = 900 MHz f = 980 MHz
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VDD = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = P1dB f MHz 900 910 920 930 940 950 960 970 980 Zload Zload 3.23 - j4.30 3.24 - j4.36 3.25 - j4.42 3.25 - j4.47 3.23 - j4.52 3.21 - j4.56 3.16 - j4.60 3.11 - j4.65 3.04 - j4.70
= Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 15. Series Equivalent Output Impedance
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NOTES
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MOTOROLA RF DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 11
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NOTES
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NOTES
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MOTOROLA RF DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 13
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PACKAGE DIMENSIONS
r1 CA B
2X
B
PIN ONE INDEX
E1
aaa
M
A
NOTE 6
aaa
M
e1 e2 D1 aaa e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
Freescale Semiconductor, Inc...
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
Y
ZONE "J"
F
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329-09 ISSUE J TO-272 WB-16 PLASTIC MW4IC915MBR1
MW4IC915MBR1 MW4IC915GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 14
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CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
4X
b1 CA
Freescale Semiconductor, Inc.
2X
aaa
M
r1 CAB
E1
B
A
PIN ONE INDEX
4X
aaa
M
b1 CA
NOTE 6
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
Freescale Semiconductor, Inc...
aaa
M
aaa
M
b CA
E
DETAIL Y
DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A-03 ISSUE B TO-272 WB-16 GULL PLASTIC MW4IC915GMBR1
MOTOROLA RF DEVICE DATA
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MW4IC915MBR1 MW4IC915GMBR1 15
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
Freescale Semiconductor, Inc.
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
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