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| MWI 50-06 A7 MWI 50-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 72 A = 600 V VCES VCE(sat) typ. = 1.9 V Preliminary Data 1 2 5 6 9 10 16 15 14 T NTC Type: MWI 50-06 A7 MWI 50-06 A7T NTC - Option: without NTC with NTC 3 4 17 7 8 11 12 T IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 22 W; TVJ = 125C Clamped inductive load; L = 100 H Conditions TVJ = 25C to 150C Maximum Ratings 600 20 72 50 ICM = 100 VCEK VCES 10 225 V V A A A s W VCE = VCES; VGE = 15 V; RG = 22 W; TVJ = 125C non-repetitive TC = 25C Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate q q q q q q q q q q q Advantages q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.7 200 50 60 300 30 2.3 1.7 2800 120 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications q q VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V q AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125C VCE = 300 V; IC = 50 A VGE = 15 V; RG = 22 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-4 023 MWI 50-06 A7 MWI 50-06 A7T Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 72 45 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 50 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.6 1.3 25 90 1.8 1.5 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.82 V; R0 = 28 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 0.89 V; R0 = 8 mW Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kW K IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 5 mW mm mm K/W g Higher magnification see outlines.pdf (c) 2000 IXYS All rights reserved 2-4 MWI 50-06 A7 MWI 50-06 A7T 150 A 120 VGE= 17V 15V 13V 150 A 120 90 11V VGE= 17V 15V 13V IC IC 90 60 30 0 0 1 2 3 4 VCE 5 V 9V TVJ = 25C 11V 60 30 0 9V TVJ = 125C 6 0 1 2 3 4 VCE 5V 6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 A 120 IC 90 A 75 IF 60 90 45 60 TVJ = 125C TVJ = 125C TVJ = 25C 30 TVJ = 25C 30 0 4 6 8 10 12 VGE VCE = 20V 15 0 0.0 14 V 16 0.5 1.0 VF 1.5 V 2.0 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A IRM 20 V 150 120 ns 90 60 TVJ = 125C VR = 300V IF = 30A MWI5006A7 15 VGE trr trr 30 10 20 5 VCE = 300V IC = 50A 10 IRM 30 0 0 0 40 80 120 QG nC 0 160 0 200 400 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MWI 50-06 A7 MWI 50-06 A7T 10.0 mJ Eon 100 ns 75 t tr Eoff td(on) 4 mJ Eoff 400 ns 300 t td(off) 7.5 3 5.0 VCE = 300V VGE = 15V 50 2 VCE = 300V VGE = 15V 200 2.5 Eon RG = 22W TVJ = 125C 25 1 RG = 22W TVJ = 125C 100 0.0 0 40 80 IC A 0 120 0 0 40 80 IC tf A 0 120 Fig. 7 Typ. turn on energy and switching times versus collector current 4 mJ Eon Eon 80 ns 60 tr VCE = 300V VGE = 15V IC = 50A TVJ = 125C Fig. 8 Typ. turn off energy and switching times versus collector current 3 mJ t Eoff Eoff 600 ns td(on) 3 2 td(off) VCE = 300V VGE = 15V IC = 50A TVJ = 125C 400 t 2 40 1 200 1 0 10 20 30 40 RG 50 W 20 60 0 0 10 20 30 40 RG tf 50 W 0 60 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A ICM 10 K/W ZthJC 1 Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 90 0.1 60 0.01 30 RG = 22 W TVJ = 125C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MWI5006A7 0 0 100 200 300 400 500 600 VCE 700 V 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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