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| MXP1005 SANTA ANA DIVISION Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps PRODUCT PREVIEW KEY FEATURES DESCRIPTION W W W.Microsemi .COM Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents (see graph for Vf vs. If). A version with attached leads is available. Gold diffused for low forward voltage Epitaxial structure minimizes forward voltage drop Forward voltage decreases with radiation exposure Qualified for space applications Available in leaded configuration High voltage for series applications APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage MAXIMUM RATINGS @ 25C (UNLESS OTHERWISE SPECIFIED) Description Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 135C Junction Temperature Range Storage Temperature Range Symbol VRRM VRWM VR IF(ave) Tj Tstg Max. 120 120 120 2.25 -65 to +150 -65 to +200 Unit Volts Volts Volts Amps C C ELECTRICAL PARAMETERS Description Reverse (Leakage) Current (in dark) Forward Voltage pulse test, pw= 300 s Junction Capacitance Breakdown Voltage Symbol IR25 IR150 VF1 Cj1 BVR Conditions VR= 96 Vdc, Ta= 25C VR= 96 Vdc, Ta= 150C IF= 2. 25 A, Ta= 25C VR= 4 Vdc IR= 200 A, Ta= 25C Min Typ. 2 4 720 300 160 Max 10 8 840 600 Unit A mA mV pF V 120 MXP1005 MXP1005 Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 1 MXP1005 SANTA ANA DIVISION Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps PRODUCT PREVIEW Mechanical Outline W W W.Microsemi .COM MXP1005 die dimensions in mils before sawing 160 147 metal pad (anode) 13 0 0 13 die thickness is nominal 4.5 to 5.5 mils 147 160 MECHANICALS MECHANICALS Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MXP1005 SANTA ANA DIVISION Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps PRODUCT PREVIEW W W W.Microsemi .COM MXP1005 typical capacitance vs. voltage 350 300 capacitance (pF) 250 200 150 100 0 10 20 30 40 50 Vr (V) 60 70 80 90 100 MXP1005 typical reverse current vs. temperature 1.00E-02 1.00E-03 Ir @ 96V (A) 1.00E-04 1.00E-05 GRAPHS GRAPHS 1.00E-06 25 50 75 Ta (deg. C) 100 125 150 Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 MXP1005 SANTA ANA DIVISION Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps PRODUCT PREVIEW W W W.Microsemi .COM MXP1005 typical forward characteristic 0.90 0.85 Vf (V) 0.80 0.75 0.70 0.0 5.0 10.0 15.0 If (A) 20.0 25.0 30.0 35.0 GRAPHS GRAPHS Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4 MXP1005 SANTA ANA DIVISION Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps PRODUCT PREVIEW NOTES W W W.Microsemi .COM NOTES NOTES Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 5 |
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