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 MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps
PRODUCT PREVIEW
KEY FEATURES
DESCRIPTION
WWW .Microsemi .C OM
Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents. A version with attached leads is available.
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Triangular shape to fit in corner near flat of photovoltaic cell Forward voltage decreases with radiation exposure Targeted for terrestrial applications with silicon photovoltaic cells Thin construction for fit with photovoltaic cells
APPLICATIONS/BENEFITS Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage
MAXIMUM RATINGS @ 25C (UNLESS OTHERWISE SPECIFIED)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 135C Junction Temperature Range Storage Temperature Range
SYMBOL VRRM VRWM VR IF(ave) Tj Tstg
MAX. 50 50 50 1.0 -65 to +150 -65 to +200
UNIT Volts Volts Volts Amps C C
ELECTRICAL PARAMETERS
DESCRIPTION
Reverse (Leakage) Current (in dark) Forward Voltage pulse test, pw= 300 s Junction Capacitance Breakdown Voltage
SYMBOL
IR25 IR25 VF1 VF2 Cj1 BVR
CONDITIONS
VR= 4 Vdc, Ta= 25C VR= 50 Vdc, Ta= 25C IF= 400 mA, Ta= 25C IF= 1.0 A, Ta= 25C VR= 4 Vdc IR= 200 A, Ta= 25C
MIN
TYP.
10 20 750 770 1050 60
MAX
200 775 800 1300
UNIT
nA nA mV mV pF V
MXP1144P MXP1144P
50
Copyright (c) 2002 MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps
PRODUCT PREVIEW
Mechanical Outline
WWW .Microsemi .C OM
L 315.0
289.0 R = 4.0, 6 PL.
metal (cathode)
26.0
0
0 26.0
26.0
289.0
315.0
MXP1144P
MECHANICALS MECHANICALS
all dimensions in mils
Standard die thickness is 5.0 +/- 0.5 mils
Copyright (c) 2002 MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps
PRODUCT PREVIEW
Typical location with 100mm diameter photovoltaic cell
WWW .Microsemi .C OM
diode location
MECHANICALS MECHANICALS
Copyright (c) 2002 MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
MXP1144P
SANTA ANA DIVISION
PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps
PRODUCT PREVIEW
NOTES
WWW .Microsemi .C OM
NOTES NOTES
Copyright (c) 2002 MXP1144.PDF, 2003-08-15
Microsemi
Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4


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