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PRELIMINARY DATA SHEET
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
FEATURES
* * * * * HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 m (recessed gate) GATE WIDTH: Wg = 330 m 4 PINS SUPER MINI MOLD
0.3 -0.05
NE72118
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 0.2 1.25 0.1
2 3
2.0 0.2
(1.25)
+0.1 -0.05
0.9 0.1
The NE72118 is a high performance gallium arsenide metal semiconductor field effect transistor (MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This device's low phase noise and high fT make it an excellent choice for oscillator applications on a digital LNB (Low Noise Block). NEC's stringent quality assurance and test procedures ensure the highest reliability performance.
0.3
PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS IGSO IDSS VGS (OFF) gm PN Gs Po (1dB) PARAMETERS AND CONDITIONS Gate to Source Leak Current at VGS = -5 V Saturated Drain Current at VDS = 3 V, VGS = 0 V Gate to Source Cut off Voltage at VDS = 3 V, ID = 100 A Transconductance at VDS = 3 V, ID = 30 mA UNITS A A V mS 30 -0.5 20 MIN NE72118 18 TYP 1.0 60 -2.0 40 -110 -85 5.5 13.5 MAX 10 100 -4.0
Phase Noise at VDS=3 V, ID=30mA, f=11GHz,100KHz offset dBc/Hz Phase Noise at VDS=3 V, ID=30mA, f=11GHz, 10KHz offset dBc/Hz Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point at VCE = 3 V, ID = 30 mA, f = 12 GHz dB dBm
California Eastern Laboratories
0 to 0.1
0.15 -0.05
+0.1
0.3 -0.05
0.4
1
4
+0.1
DESCRIPTION
0.60
(1.3) 0.3 -0.05
0.65
+0.1
+0.1
TAPE & REEL PACKAGING
V53
NE72118 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGS VGD ID PTOT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5.0 -6.0 -6.0 IDSS 250 125 -65 to +125
ORDERING INFORMATION
PART NUMBER NE72118-T1 NE72118-T2 QUANTITY 3K/Reel 3K/Reel
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Total Power Dissipation, PTOT (mW)
100
Drain Current, ID (mA)
400
80 VGS = 0 V
300
60
200
40 VGS = -0.5 V 20 VGS = -1.0 V
100
0
50
100
150
200
250
0
1
2
3
4
5
Ambient Temperature, TA (C)
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
80
VDS = 3 V
Drain Current, ID (mA)
60
40
20
0 -4.0 -2.0 0
Gate to Source Volatge, VGS (V)
NE72118 TYPICAL SCATTERING PARAMETERS (TA = 25C)
VDS = 3 V, ID = 10 mA
FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG 0.922 0.864 0.784 0.709 0.658 0.623 0.597 0.613 0.677 0.749 0.797 0.839 0.877 0.909 0.934 0.928 0.920 S11 ANG -46.8 -66.8 -89.8 -116.1 -140.5 -164.0 171.4 146.3 125.6 107.4 90.8 78.4 65.7 51.9 43.9 40.2 31.7 MAG 2.257 2.171 2.125 2.049 1.927 1.780 1.639 1.545 1.450 1.297 1.117 0.959 0.811 0.636 0.483 0.376 0.306 S21 ANG 134.5 116.4 97.4 77.5 58.5 40.2 23.3 6.5 -12.0 -31.1 -48.8 -65.1 -82.3 -99.1 -111.1 -118.6 -125.6 MAG 0.067 0.089 0.104 0.110 0.107 0.101 0.095 0.100 0.117 0.136 0.147 0.159 0.164 0.157 0.145 0.136 0.126 S12 ANG 58.5 47.7 37.0 25.3 17.8 13.2 12.7 16.8 16.3 10.0 1.6 -8.4 -20.8 -33.1 -42.7 -49.3 -55.8 MAG 0.667 0.627 0.591 0.545 0.481 0.416 0.358 0.323 0.284 0.251 0.295 0.395 0.499 0.577 0.643 0.733 0.795 S22 ANG -27.5 -39.0 -49.5 -58.9 -68.0 -80.0 -92.8 -109.6 -137.3 -178.5 138.4 107.9 85.8 68.3 54.4 44.4 39.5 0.38 0.50 0.65 0.83 1.08 1.38 1.72 1.70 1.37 1.13 1.07 0.95 0.83 0.79 0.75 0.86 0.97 K MAG1 (dB) 17.86 14.86 12.57 10.79 10.84 8.79 7.42 7.03 7.31 7.58 7.19 5.67 5.79 5.42 4.97 3.43 2.18
VDS = 3 V, ID = 20 mA
FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG 0.907 0.838 0.752 0.675 0.627 0.591 0.570 0.592 0.666 0.742 0.794 0.838 0.880 0.914 0.939 0.935 0.920 S11 ANG -49.0 -69.9 -93.4 -120.3 -144.7 -168.0 167.6 143.3 123.6 105.8 89.6 77.7 65.3 51.1 43.3 39.5 30.8 MAG 2.672 2.534 2.437 2.318 2.155 1.972 1.803 1.695 1.594 1.429 1.239 1.073 0.913 0.723 0.552 0.431 0.350 S21 ANG 133.0 114.7 95.8 76.0 57.5 39.6 23.2 7.0 -11.0 -29.9 -47.1 -63.6 -81.1 -98.1 -110.5 -118.9 -124.9 MAG 0.061 0.081 0.093 0.098 0.096 0.095 0.093 0.104 0.125 0.144 0.157 0.168 0.173 0.166 0.153 0.141 0.134 S12 ANG 58.3 48.6 38.1 29.5 24.3 21.6 22.7 24.6 22.4 13.7 4.7 -5.6 -18.0 -31.7 -40.2 -48.1 -57.2 MAG 0.637 0.594 0.561 0.521 0.459 0.394 0.337 0.307 0.269 0.226 0.260 0.365 0.476 0.552 0.617 0.707 0.788 S22 ANG -27.5 -38.8 -48.8 -57.4 -65.3 -76.3 -88.8 -104.8 -132.2 -173.8 139.7 107.7 85.9 69.2 55.1 44.5 39.6 0.43 0.56 0.72 0.91 1.15 1.43 1.72 1.58 1.23 1.03 0.98 0.89 0.77 0.71 0.68 0.76 0.86 K MAG1 (dB) 18.30 15.23 13.00 11.31 11.13 9.29 7.97 7.66 8.19 8.85 6.49 6.50 6.78 6.60 6.17 4.73 3.20
NE72118 TYPICAL SCATTERING PARAMETERS (TA = 25C)
VDS = 3 V, ID = 30 mA
FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG 0.900 0.826 0.734 0.657 0.609 0.577 0.558 0.581 0.659 0.739 0.794 0.840 0.888 0.923 0.944 0.941 0.922 S11 ANG -50.1 -71.2 -94.9 -121.9 -146.2 -169.5 166.5 142.6 123.3 105.9 89.9 77.8 65.3 51.2 43.3 39.4 30.8 MAG 2.906 2.733 2.611 2.466 2.286 2.084 1.899 1.789 1.688 1.522 1.324 1.150 0.983 0.781 0.596 0.465 0.374 S21 ANG 132.3 114.0 95.2 75.7 57.4 39.8 23.7 7.8 -10.0 -28.8 -46.2 -62.6 -80.4 -97.6 -110.4 -119.0 -125.9 MAG 0.058 0.074 0.086 0.088 0.089 0.089 0.091 0.104 0.130 0.152 0.164 0.177 0.183 0.175 0.157 0.147 0.136 S12 ANG 58.4 49.0 39.8 32.6 28.1 27.6 30.1 31.9 27.7 18.4 8.5 -2.9 -16.4 -29.8 -39.7 -47.1 -54.5 MAG 0.640 0.596 0.563 0.524 0.468 0.407 0.354 0.323 0.285 0.238 0.260 0.359 0.469 0.549 0.621 0.712 0.787 S22 ANG -27.1 -38.2 -47.6 -55.7 -63.2 -74.0 -85.7 -101.4 -127.2 -167.1 145.9 112.2 89.2 71.6 56.4 45.5 40.0 0.44 0.59 0.76 0.96 1.19 1.44 1.66 1.50 1.12 0.93 0.89 0.80 0.68 0.62 0.60 0.67 0.82 K MAG1 (dB) 18.76 15.62 13.35 11.69 11.46 9.76 8.46 8.17 9.05 7.33 7.06 7.14 7.67 7.68 7.28 5.80 3.89
VDS = 3 V, ID = 40 mA
FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG 0.894 0.817 0.725 0.647 0.600 0.569 0.550 0.571 0.653 0.737 0.799 0.846 0.895 0.931 0.956 0.949 0.932 S11 ANG -50.6 -72.0 -95.7 -122.6 -146.6 -170.0 166.1 142.5 123.9 106.6 90.5 78.3 65.9 51.6 43.6 39.4 30.6 MAG 3.050 2.858 2.716 2.556 2.368 2.156 1.968 1.855 1.760 1.602 1.398 1.215 1.045 0.827 0.630 0.487 0.386 S21 ANG 132.1 113.7 95.0 75.8 57.7 40.2 24.2 8.7 -9.0 -27.9 -45.5 -62.3 -80.3 -98.1 -111.4 -120.5 -127.2 MAG 0.053 0.068 0.078 0.080 0.079 0.082 0.086 0.104 0.134 0.159 0.176 0.188 0.195 0.186 0.169 0.158 0.144 S12 ANG 59.6 49.2 41.5 33.7 34.1 34.0 37.9 40.5 35.6 24.5 13.2 1.8 -12.7 -26.9 -38.4 -47.0 -53.2 MAG 0.660 0.615 0.582 0.546 0.495 0.440 0.394 0.366 0.329 0.279 0.282 0.368 0.477 0.562 0.635 0.724 0.792 S22 ANG -26.6 -37.0 -46.0 -53.7 -61.2 -71.7 -82.9 -97.4 -121.7 -158.0 157.2 120.6 95.3 75.6 59.3 47.5 41.7 0.44 0.61 0.79 1.00 1.24 1.45 1.63 1.41 1.00 0.82 0.76 0.71 0.59 0.53 0.48 0.53 0.69 K MAG1 (dB) 19.16 15.97 13.72 14.83 11.83 10.21 8.96 8.73 10.81 7.85 7.69 7.79 8.52 8.73 8.84 6.97 4.84
Note: 1. Gain Calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -6/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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