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| F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor LOW R(on) Switch Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C S-D G Devices in this Databook based on the NJ450 Process. Datasheet 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A G Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate. S-D At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Drain Source ON Resistance Forward Transconductance Input Capacitance Feedback Capacitance rds(on) gfs Ciss Crss 7 250 20 10 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 - 0.1 Min - 25 Typ - 30 - 50 - 1000 600 - 10 Max Unit V pA mA V NJ450 Process Test Conditions IG = - 1 A, VDS = OV VGS = - 15V, VDS = OV VDS = 15V, VGS = OV VDS = 15V, ID = 1 nA ID = 1 mA, VGS = OV VDS = 15V, VGS = OV VDS = OV, VGS = - 10V VDS = OV, VGS = - 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-37 NJ450 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 4.5 V Gfs as a Function of VGS(OFF) 450 Transconductance in mS 300 VGS = O V Drain Current in mA 250 VGS = -1 V 200 VGS = -2 V 150 VGS = -3 V 100 VGS = -4 V 0 5 10 15 20 300 150 0 -1 -2 -3 -4 -5 -6 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Source (on) Resistance in Drain Saturation Current in mA 500 400 300 200 100 30 25 20 15 10 5 0 -1 RDS as a Function of VGS(OFF) 0 -1 -2 -3 -4 -5 -6 -2 -3 -4 -5 -6 Drain Source Cutoff Voltage in Volts Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 100 80 VDS = O V 60 VDS = 5 V 40 20 VDS = 10 V Feedback Capacitance in pF Input Capacitance in pF 100 80 60 Feedback Capacitance as a Function of VGS VDS = O V 40 20 VDS = 5 V VDS = 10 V 0 -4 -8 - 12 - 16 0 -4 -8 - 12 - 16 Gate Source Voltage in Volts Gate Source Voltage in Volts |
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