 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com * Pb-Free Packages are Available Typical Applications 23 AMPERES, 25 VOLTS RDS(on) = 32 mW (Typ) N-CHANNEL D * * * * * Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters G S MAXIMUM RATINGS (TJ = 25C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C, Limited by Chip - Continuous @ TA = 25C, Limited by Package - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Case Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RqJC TL Value 25 20 23 6.0 60 37.5 -55 to 150 3.3 260 W C C/W C Unit Vdc Vdc A 1 2 3 D2PAK CASE 418B STYLE 2 T23N03 A Y WW G 1 Gate 4 4 Drain T23 N03G AYWW 2 Drain 3 Source MARKING DIAGRAM & PIN ASSIGNMENTS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2005 1 August, 2005 - Rev. 2 Publication Order Number: NTB23N03R/D NTB23N03R ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 1) (VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc) Forward Transconductance (Note 1) (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 6 Adc, VDS = 10 Vdc) (Note 1) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 6 Adc, VGS = 0 Vdc) (Note 1) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125C) VSD - - trr (IS = 6 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures. ta tb QRR - - - - 0.87 0.74 8.7 5.2 3.5 0.003 1.2 - - - - - mC ns Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 2.0 14.9 9.9 2.0 3.76 1.7 1.6 - - - - - - - nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Ciss Coss Crss - - - 225 108 48 - - - pF VGS(th) 1.0 - RDS(on) - - gFS - 14 - 50.3 32.3 60 45 Mhos 1.8 - 2.0 - Vdc mV/C mW V(br)DSS 25 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 28 - - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time ORDERING INFORMATION Device NTB23N03R NTB23N03RG NTB23N03RT4 NTB23N03RT4G Package D2PAK D2PAK (Pb-Free) D2PAK D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 800 Units / Tape & Reel 800 Units / Tape & Reel Shipping 50 Units / Rail 50 Units / Rail http://onsemi.com 2 NTB23N03R 20 10 V ID, DRAIN CURRENT (AMPS) 16 4.5 V 8V 6V 5V 12 20 4V ID, DRAIN CURRENT (AMPS) VDS 10 V 16 3.5 V 12 8 3V 4 VGS = 2.5 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 8 TJ = 25C TJ = 125C 0 1 2 3 TJ = -55C 4 5 6 4 0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.20 VGS = 10 V 0.16 0.20 VGS = 4.5 V 0.16 0.12 0.12 TJ = 125C 0.08 TJ = 25C 0.04 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) TJ = -55C 0.08 TJ = 125C 0.04 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) TJ = 25C TJ = -55C Figure 3. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 ID = 6 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On-Resistance versus Drain Current and Temperature VGS = 0 V TJ = 150C 100 TJ = 125C 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTB23N03R VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 400 VDS = 0 V VGS = 0 V Ciss C, CAPACITANCE (pF) 300 Crss 200 TJ = 25C 8 VGS 6 QT 4 Q2 Ciss Q1 Coss 100 Crss 0 10 5 VGS 0 VDS 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 ID = 6 A TJ = 25C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 6 A VGS = 10 V t, TIME (ns) 10 VGS = 0 V 8 10 tr td(off) 6 4 TJ = 150C 2 TJ = 25C 0 0 0.2 0.4 0.6 0.8 1.0 td(on) tf 1 1 10 RG, GATE RESISTANCE (W) 100 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTB23N03R PACKAGE DIMENSIONS D2PAK CASE 418AA-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 --- 0.100 BSC 0.018 0.025 0.090 0.110 0.280 --- 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 --- 2.54 BSC 0.46 0.64 2.29 2.79 7.11 --- 14.60 15.88 1.14 1.40 C E -B- 4 V W A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) J W DIM A B C D E F G J K M S V M TB M VARIABLE CONFIGURATION ZONE U STYLE 2: PIN 1. 2. 3. 4. M M M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTB23N03R ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTB23N03R/D |
Price & Availability of NTB23N03RT4G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |